JI

John A. Iacoponi

AM AMD: 41 patents #198 of 9,279Top 3%
Globalfoundries: 12 patents #298 of 4,424Top 7%
Motorola: 1 patents #6,475 of 12,470Top 55%
Overall (All Time): #49,420 of 4,157,543Top 2%
53
Patents All Time

Issued Patents All Time

Showing 25 most recent of 53 patents

Patent #TitleCo-InventorsDate
10050118 Semiconductor device configured for avoiding electrical shorting Ruilong Xie, Ryan Ryoung-Han Kim, Chanro Park, William J. Taylor, Jr. 2018-08-14
9318436 Copper based nitride liner passivation layers for conductive copper structures Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan 2016-04-19
9117877 Methods of forming a dielectric cap layer on a metal gate structure Xiuyu Cai, Ruilong Xie, Jin Cho 2015-08-25
9087881 Electroless fill of trench in semiconductor structure Sean Xuan Lin, Xunyuan Zhang, Ming He, Larry Zhao, Kunaljeet Tanwar 2015-07-21
8946075 Methods of forming semiconductor device with self-aligned contact elements and the resulting devices Xiuyu Cai, Ruilong Xie 2015-02-03
8940633 Methods of forming semiconductor device with self-aligned contact elements and the resulting devices Xiuyu Cai, Ruilong Xie 2015-01-27
8859419 Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan 2014-10-14
8753975 Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan 2014-06-17
8728908 Methods of forming a dielectric cap layer on a metal gate structure Ruilong Xie, Chang Seo Park, William James Taylor, III 2014-05-20
8691696 Methods for forming an integrated circuit with straightened recess profile Xiuyu Cai, Xunyuan Zhang, Ruilong Xie, Errol Todd Ryan 2014-04-08
8592312 Method for depositing a conductive capping layer on metal lines E. Todd Ryan 2013-11-26
8105943 Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques Christof Streck, Volker Kahlert 2012-01-31
7759205 Methods for fabricating semiconductor devices minimizing under-oxide regrowth Kingsuk Maitra 2010-07-20
7557035 Method of forming semiconductor devices by microwave curing of low-k dielectric films E. Todd Ryan 2009-07-07
6809032 Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques Frank Mauersberger, Peter J. Beckage, Paul R. Besser, Frederick N. Hause, Errol Todd Ryan +1 more 2004-10-26
6690580 Integrated circuit structure with dielectric islands in metallized regions Cindy Goldberg 2004-02-10
6649533 Method and apparatus for forming an under bump metallurgy layer 2003-11-18
6555396 Method and apparatus for enhancing endpoint detection of a via etch Ailian Zhao, Thomas E. Spikes, Jr. 2003-04-29
6555479 Method for forming openings for conductive interconnects Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more 2003-04-29
6514858 Test structure for providing depth of polish feedback Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more 2003-02-04
6489240 Method for forming copper interconnects Paul R. Besser, Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more 2002-12-03
6489683 Variable grain size in conductors for semiconductor vias and trenches Sergey Lopatin 2002-12-03
6468889 Backside contact for integrated circuit and method of forming same John C. Miethke 2002-10-22
6448099 Method and apparatus for detecting voltage contrast in a semiconductor wafer Tom Spikes, Jr., John C. Miethke 2002-09-10
6413846 Contact each methodology and integration scheme Paul R. Besser, Errol Todd Ryan, Frederick N. Hause, Frank Mauersberger, William S. Brennan +1 more 2002-07-02