| 10050118 |
Semiconductor device configured for avoiding electrical shorting |
Ruilong Xie, Ryan Ryoung-Han Kim, Chanro Park, William J. Taylor, Jr. |
2018-08-14 |
$10,336,000 |
| 9318436 |
Copper based nitride liner passivation layers for conductive copper structures |
Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan |
2016-04-19 |
$757,000 |
| 9117877 |
Methods of forming a dielectric cap layer on a metal gate structure |
Xiuyu Cai, Ruilong Xie, Jin Cho |
2015-08-25 |
$1,522,000 |
| 9087881 |
Electroless fill of trench in semiconductor structure |
Sean Xuan Lin, Xunyuan Zhang, Ming He, Larry Zhao, Kunaljeet Tanwar |
2015-07-21 |
$1,266,000 |
| 8946075 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices |
Xiuyu Cai, Ruilong Xie |
2015-02-03 |
$1,992,000 |
| 8940633 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices |
Xiuyu Cai, Ruilong Xie |
2015-01-27 |
$1,455,000 |
| 8859419 |
Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device |
Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan |
2014-10-14 |
$1,406,000 |
| 8753975 |
Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device |
Xunyuan Zhang, Larry Zhao, Ming He, Sean Xuan Lin, Errol Todd Ryan |
2014-06-17 |
$6,338,000 |
| 8728908 |
Methods of forming a dielectric cap layer on a metal gate structure |
Ruilong Xie, Chang Seo Park, William James Taylor, III |
2014-05-20 |
$2,934,000 |
| 8691696 |
Methods for forming an integrated circuit with straightened recess profile |
Xiuyu Cai, Xunyuan Zhang, Ruilong Xie, Errol Todd Ryan |
2014-04-08 |
$3,686,000 |
| 8592312 |
Method for depositing a conductive capping layer on metal lines |
E. Todd Ryan |
2013-11-26 |
$3,520,000 |
| 8105943 |
Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques |
Christof Streck, Volker Kahlert |
2012-01-31 |
$11,798,000 |
| 7759205 |
Methods for fabricating semiconductor devices minimizing under-oxide regrowth |
Kingsuk Maitra |
2010-07-20 |
$12,141,000 |
| 7557035 |
Method of forming semiconductor devices by microwave curing of low-k dielectric films |
E. Todd Ryan |
2009-07-07 |
$14,531,000 |
| 6809032 |
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques |
Frank Mauersberger, Peter J. Beckage, Paul R. Besser, Frederick N. Hause, Errol Todd Ryan +1 more |
2004-10-26 |
$3,793,000 |
| 6690580 |
Integrated circuit structure with dielectric islands in metallized regions |
Cindy Goldberg |
2004-02-10 |
|
| 6649533 |
Method and apparatus for forming an under bump metallurgy layer |
— |
2003-11-18 |
$4,875,000 |
| 6555396 |
Method and apparatus for enhancing endpoint detection of a via etch |
Ailian Zhao, Thomas E. Spikes, Jr. |
2003-04-29 |
$1,822,000 |
| 6555479 |
Method for forming openings for conductive interconnects |
Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more |
2003-04-29 |
$1,822,000 |
| 6514858 |
Test structure for providing depth of polish feedback |
Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more |
2003-02-04 |
$1,030,000 |
| 6489240 |
Method for forming copper interconnects |
Paul R. Besser, Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more |
2002-12-03 |
$4,258,000 |
| 6489683 |
Variable grain size in conductors for semiconductor vias and trenches |
Sergey Lopatin |
2002-12-03 |
$4,258,000 |
| 6468889 |
Backside contact for integrated circuit and method of forming same |
John C. Miethke |
2002-10-22 |
$2,399,000 |
| 6448099 |
Method and apparatus for detecting voltage contrast in a semiconductor wafer |
Tom Spikes, Jr., John C. Miethke |
2002-09-10 |
$1,244,000 |
| 6413846 |
Contact each methodology and integration scheme |
Paul R. Besser, Errol Todd Ryan, Frederick N. Hause, Frank Mauersberger, William S. Brennan +1 more |
2002-07-02 |
$3,406,000 |
