Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9002493 | Endpoint detector for a semiconductor processing station and associated methods | John H. Zhang | 2015-04-07 |
| 8987780 | Graphene capped HEMT device | John H. Zhang, Walter Kleemeier | 2015-03-24 |
| 8900990 | System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections | John H. Zhang, Lawrence A. Clevenger, Carl Radens, Yiheng Xu, Walter Kleemeier | 2014-12-02 |
| 8476765 | Copper interconnect structure having a graphene cap | John H. Zhang, Walter Kleemeier, Ronald K. Sampson | 2013-07-02 |
| 7994069 | Semiconductor wafer with low-K dielectric layer and process for fabrication thereof | Brad Smith, Robert E. Jones | 2011-08-09 |
| 7951729 | Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereor, and material for coupling a dielectric layer and a metal layer in a semiconductor device | János Farkas, Srdjan Kordic | 2011-05-31 |
| 7691756 | Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device | János Farkas, Srdjan Kordic | 2010-04-06 |
| 6838354 | Method for forming a passivation layer for air gap formation | Stanley M. Filipiak, John C. Flake, Yeong-Jyh T. Lii, Bradley P. Smith, Yuri Solomentsev +3 more | 2005-01-04 |
| 6774053 | Method and structure for low-k dielectric constant applications | Errol Todd Ryan, Yuri Solomentsev, Yeong-Jyh T. Lii | 2004-08-10 |
| 6690580 | Integrated circuit structure with dielectric islands in metallized regions | John A. Iacoponi | 2004-02-10 |
| 6297155 | Method for forming a copper layer over a semiconductor wafer | Cindy Reidsema Simpson, Robert D. Mikkola, Matthew T. Herrick, Brett Baker, David Moralez Pena +4 more | 2001-10-02 |