SF

Stanley M. Filipiak

Motorola: 14 patents #557 of 12,470Top 5%
FS Freeescale Semiconductor: 7 patents #456 of 3,767Top 15%
📍 Pflugerville, TX: #50 of 621 inventorsTop 9%
🗺 Texas: #6,413 of 125,132 inventorsTop 6%
Overall (All Time): #211,112 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
7763538 Dual plasma treatment barrier film to reduce low-k damage Michael D. Turner, Ritwik Chatterjee 2010-07-27
7592273 Semiconductor device with hydrogen barrier and method therefor Zhi-Xiong Jiang, Mehul D. Shroff 2009-09-22
7442598 Method of forming an interlayer dielectric Paul A. Grudowski, Yongloo Jeon, Chad Weintraub 2008-10-28
7422979 Method of forming a semiconductor device having a diffusion barrier stack and structure thereof Lynne Michaelson, Edward Acosta, Ritwik Chatterjee, Sam S. Garcia, Varughese Mathew 2008-09-09
7157377 Method of making a semiconductor device using treated photoresist Cesar M. Garza, William D. Darlington, James E. Vasek 2007-01-02
7074713 Plasma enhanced nitride layer Jian Chen, Yongjoo Jeon, Tab A. Stephens 2006-07-11
6838354 Method for forming a passivation layer for air gap formation Cindy Goldberg, John C. Flake, Yeong-Jyh T. Lii, Bradley P. Smith, Yuri Solomentsev +3 more 2005-01-04
6686633 Semiconductor device, memory cell, and processes for forming them Craig S. Lage, Mousumi Bhat, Yeong-Jyh T. Lii, Andrew G. Nagy, Larry E. Frisa +5 more 2004-02-03
6475925 Reduced water adsorption for interlayer dielectric Gregor Braeckelmann 2002-11-05
6287951 Process for forming a combination hardmask and antireflective layer Kevin Lucas, Christopher D. Pettinato, Wayne Clark, Yeong-Jyh T. Lii 2001-09-11
6284633 Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode Rajan Nagabushnam, Bruce Boeck 2001-09-04
6218733 Semiconductor device having a titanium-aluminum compound Robert W. Fiordalice, Johnson O. Olowolafe, Hisao Kawasaki 2001-04-17
6184073 Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region Craig S. Lage, Mousumi Bhat, Yeong-Jyh T. Lii, Andrew G. Nagy, Larry E. Frisa +5 more 2001-02-06
6174810 Copper interconnect structure and method of formation Rabiul Islam, Avgerinos V. Gelatos, Kevin Lucas, Ramnath Venkatraman 2001-01-16
6054377 Method for forming an inlaid via in a semiconductor device John C. Arnold, Phillip E. Crabtree 2000-04-25
5918147 Process for forming a semiconductor device with an antireflective layer Ted R. White, T. P. Ong, Jung-Hui Lin, Wayne M. Paulson, Bernard J. Roman 1999-06-29
5447887 Method for capping copper in semiconductor devices Avgerinos V. Gelatos 1995-09-05
5358901 Process for forming an intermetallic layer Robert W. Fiordalice, Johnson O. Olowolafe, Hisao Kawasaki 1994-10-25
5310626 Method for forming a patterned layer using dielectric materials as a light-sensitive material Mark G. Fernandes, Jeffrey T. Wetzel 1994-05-10
5188979 Method for forming a nitride layer using preheated ammonia 1993-02-23
5126283 Process for the selective encapsulation of an electrically conductive structure in a semiconductor device Faivel Pintchovski, John R. Yeargain 1992-06-30