Issued Patents All Time
Showing 25 most recent of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12113012 | Device, method and system to prevent pattern collapse in a semiconductor structure | — | 2024-10-08 |
| 10679937 | Devices and methods of forming low resistivity noble metal interconnect | Xunyuan Zhang, Frank W. Mont | 2020-06-09 |
| 10636698 | Skip via structures | Xunyuan Zhang, Frank W. Mont | 2020-04-28 |
| 10580696 | Interconnects formed by a metal displacement reaction | Sean Xuan Lin, Christian Witt, Mark V. Raymond, Nicholas V. LiCausi | 2020-03-03 |
| 10485111 | Via and skip via structures | Shao Beng Law, Nicholas V. LiCausi, James Jay McMahon, Ryan Smith, Xunyuan Zhang | 2019-11-19 |
| 10283372 | Interconnects formed by a metal replacement process | Sean Xuan Lin, Xunyuan Zhang, Mark V. Raymond, Nicholas V. LiCausi | 2019-05-07 |
| 10262892 | Skip via structures | Xunyuan Zhang, Frank W. Mont | 2019-04-16 |
| 10199261 | Via and skip via structures | James Jay McMahon, Ryan Smith, Nicholas V. LiCausi, Xunyuan Zhang, Shao Beng Law | 2019-02-05 |
| 10181421 | Liner recess for fully aligned via | Sean Xuan Lin | 2019-01-15 |
| 10177028 | Method for manufacturing fully aligned via structures having relaxed gapfills | Nicholas V. LiCausi | 2019-01-08 |
| 10170330 | Method for recessing a carbon-doped layer of a semiconductor structure | — | 2019-01-01 |
| 10163633 | Non-mandrel cut formation | Shao Beng Law, Xunyuan Zhang, Nicholas V. LiCausi | 2018-12-25 |
| 10134580 | Metallization levels and methods of making thereof | Nicholas V. LiCausi, Sean Xuan Lin | 2018-11-20 |
| 10109526 | Etch profile control during skip via formation | Xunyuan Zhang, Nicholas V. LiCausi, J. Jay McMahon, Ryan Smith, Shao Beng Law | 2018-10-23 |
| 10008408 | Devices and methods of forming asymmetric line/space with barrierless metallization | Nicholas V. LiCausi | 2018-06-26 |
| 9831174 | Devices and methods of forming low resistivity noble metal interconnect | Xunyuan Zhang, Frank W. Mont | 2017-11-28 |
| 9613906 | Integrated circuits including modified liners and methods for fabricating the same | Xunyuan Zhang | 2017-04-04 |
| 9583380 | Anisotropic material damage process for etching low-K dielectric materials | — | 2017-02-28 |
| 9570394 | Formation of IC structure with pair of unitary metal fins | Xunyuan Zhang, Nicholas V. LiCausi | 2017-02-14 |
| 9559059 | Methods of forming an improved via to contact interface by selective formation of a conductive capping layer | Xunyuan Zhang, Tibor Bolom | 2017-01-31 |
| 9530691 | Methods, apparatus and system for forming a dielectric field for dual orientation self aligned vias | Xunyuan Zhang | 2016-12-27 |
| 9520321 | Integrated circuits and methods for fabricating integrated circuits with self-aligned vias | Sean Xuan Lin | 2016-12-13 |
| 9466530 | Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer | Xunyuan Zhang, Tibor Bolom | 2016-10-11 |
| 9435947 | Integration of optical components in integrated circuits by separating two substrates with an insulation layer | — | 2016-09-06 |
| 9431294 | Methods of producing integrated circuits with an air gap | Ming He, Roderick A. Augur, Craig Child, Larry Zhao | 2016-08-30 |