Issued Patents All Time
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE49820 | Semiconductor device having a self-forming barrier layer at via bottom | Ming He, Xunyuan Zhang, Sean Xuan Lin | 2024-01-30 |
| RE47630 | Semiconductor device having a self-forming barrier layer at via bottom | Ming He, Xunyuan Zhang, Sean Xuan Lin | 2019-10-01 |
| 10262943 | Interlevel conductor pre-fill utilizing selective barrier deposition | Artur Kolics, William T. Lee, Derek Wong, Praveen Nalla, Kaihan Ashtiani +2 more | 2019-04-16 |
| 9875968 | Interlevel conductor pre-fill utilizing selective barrier deposition | Artur Kolics, William T. Lee, Derek Wong, Praveen Nalla, Kaihan Ashtiani +2 more | 2018-01-23 |
| 9666524 | Electro-migration enhancing method for self-forming barrier process in copper mettalization | Moosung Chae | 2017-05-30 |
| 9583386 | Interlevel conductor pre-fill utilizing selective barrier deposition | Artur Kolics, William T. Lee, Derek Wong, Praveen Nalla, Kaihan Ashtiani +2 more | 2017-02-28 |
| 9484252 | Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the same | Moosung Chae | 2016-11-01 |
| 9431294 | Methods of producing integrated circuits with an air gap | Ming He, Errol Todd Ryan, Roderick A. Augur, Craig Child | 2016-08-30 |
| 9362228 | Electro-migration enhancing method for self-forming barrier process in copper metalization | Moosung Chae | 2016-06-07 |
| 9318436 | Copper based nitride liner passivation layers for conductive copper structures | Xunyuan Zhang, Ming He, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan | 2016-04-19 |
| 9287183 | Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch | Artur Kolics, Praveen Nalla | 2016-03-15 |
| 9236299 | Methods of forming a metal cap layer on copper-based conductive structures on an integrated circuit device | Xunyuan Zhang, Hoon Kim, Christian Witt | 2016-01-12 |
| 9159610 | Hybrid manganese and manganese nitride barriers for back-end-of-line metallization and methods for fabricating the same | Xunyuan Zhang, Moosung Chae | 2015-10-13 |
| 9087881 | Electroless fill of trench in semiconductor structure | Sean Xuan Lin, Xunyuan Zhang, Ming He, John A. Iacoponi, Kunaljeet Tanwar | 2015-07-21 |
| 9070711 | Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices | Ruilong Xie, Xiuyu Cai | 2015-06-30 |
| 9054052 | Methods for integration of pore stuffing material | Nicholas V. LiCausi, Errol Todd Ryan, Ming He, Moosung Chae, Kunaljeet Tanwar +4 more | 2015-06-09 |
| 8907483 | Semiconductor device having a self-forming barrier layer at via bottom | Ming He, Xunyuan Zhang, Sean Xuan Lin | 2014-12-09 |
| 8859419 | Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device | Xunyuan Zhang, Ming He, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan | 2014-10-14 |
| 8753975 | Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device | Xunyuan Zhang, Ming He, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan | 2014-06-17 |
| 8673766 | Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition | Sean Xuan Lin, Ming He, Xunyuan Zhang | 2014-03-18 |
| 8517769 | Methods of forming copper-based conductive structures on an integrated circuit device | Sean Xuan Lin, Ming He, Xunyuan Zhang | 2013-08-27 |
| 7381660 | Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness | Jeremy I. Martin, Hartmut Ruelke | 2008-06-03 |
| 6897144 | Cu capping layer deposition with improved integrated circuit reliability | Minh Van Ngo, Paul R. Besser | 2005-05-24 |
| 6656834 | Method of selectively alloying interconnect regions by deposition process | Paul R. Besser | 2003-12-02 |
| 6633085 | Method of selectively alloying interconnect regions by ion implantation | Paul R. Besser, Donggang D. Wu | 2003-10-14 |