| 12356665 |
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods |
Seungchan Yun, Inchan Hwang, Gunho Jo, Jeonghyuk Yim, Byounghak Hong +6 more |
2025-07-08 |
| 11978668 |
Integrated circuit devices including a via and methods of forming the same |
Harsono S. Simka, Anthony Dongick LEE, Seowoo Nam, Sang-Hoon Ahn |
2024-05-07 |
| RE49820 |
Semiconductor device having a self-forming barrier layer at via bottom |
Larry Zhao, Xunyuan Zhang, Sean Xuan Lin |
2024-01-30 |
| 11705363 |
Fully aligned via integration with selective catalyzed vapor phase grown materials |
Harsono S. Simka, Rebecca Park |
2023-07-18 |
| 10510675 |
Substrate structure with spatial arrangement configured for coupling of surface plasmons to incident light |
Somnath Ghosh, Eswar Ramanathan, Qanit Takmeel, Jeric Sarad, Ashwini Chandrashekar +4 more |
2019-12-17 |
| RE47630 |
Semiconductor device having a self-forming barrier layer at via bottom |
Larry Zhao, Xunyuan Zhang, Sean Xuan Lin |
2019-10-01 |
| 10199270 |
Multi-directional self-aligned multiple patterning |
Colin Bombardier, Vikrant Chauhan, Anbu Selvam KM Mahalingam, Keith Donegan |
2019-02-05 |
| 9691971 |
Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same |
Seowoo Nam, Craig Child, Hyun-Jin Cho |
2017-06-27 |
| 9576852 |
Integrated circuits with self aligned contacts and methods of manufacturing the same |
Seowoo Nam, Yann Mignot, Jim Kelly, Raghuveer Patlotta, Theodorus E. Standaert |
2017-02-21 |
| 9431294 |
Methods of producing integrated circuits with an air gap |
Errol Todd Ryan, Roderick A. Augur, Craig Child, Larry Zhao |
2016-08-30 |
| 9318436 |
Copper based nitride liner passivation layers for conductive copper structures |
Xunyuan Zhang, Larry Zhao, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan |
2016-04-19 |
| 9318437 |
Moisture scavenging layer for thinner barrier application in beol integration |
Kunaljeet Tanwar |
2016-04-19 |
| 9165770 |
Methods for fabricating integrated circuits using improved masks |
Seowoo Nam, Craig Child |
2015-10-20 |
| 9087881 |
Electroless fill of trench in semiconductor structure |
Sean Xuan Lin, Xunyuan Zhang, Larry Zhao, John A. Iacoponi, Kunaljeet Tanwar |
2015-07-21 |
| 9054052 |
Methods for integration of pore stuffing material |
Nicholas V. LiCausi, Errol Todd Ryan, Moosung Chae, Kunaljeet Tanwar, Larry Zhao +4 more |
2015-06-09 |
| 8932934 |
Methods of self-forming barrier integration with pore stuffed ULK material |
Moosung Chae, Errol Todd Ryan, Nicholas V. LiCausi, Christian Witt, Ailian Zhao +3 more |
2015-01-13 |
| 8907483 |
Semiconductor device having a self-forming barrier layer at via bottom |
Larry Zhao, Xunyuan Zhang, Sean Xuan Lin |
2014-12-09 |
| 8859419 |
Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device |
Xunyuan Zhang, Larry Zhao, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan |
2014-10-14 |
| 8753975 |
Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device |
Xunyuan Zhang, Larry Zhao, Sean Xuan Lin, John A. Iacoponi, Errol Todd Ryan |
2014-06-17 |
| 8673766 |
Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition |
Sean Xuan Lin, Xunyuan Zhang, Larry Zhao |
2014-03-18 |
| 8586473 |
Methods for fabricating integrated circuits with ruthenium-lined copper |
Kunaljeet Tanwar, Xunyuan Zhang |
2013-11-19 |
| 8517769 |
Methods of forming copper-based conductive structures on an integrated circuit device |
Sean Xuan Lin, Xunyuan Zhang, Larry Zhao |
2013-08-27 |
