| 8643083 |
Electronic devices with ultraviolet blocking layers |
Bryon K. Hance, Brian D. White, Joseph William Wiseman, Allen L. Evans |
2014-02-04 |
$2,100,000 |
| 8202810 |
Low-H plasma treatment with N2 anneal for electronic memory devices |
Alexander H. Nickel, Allen L. Evans, Minh Quoc Tran, Lu You, Minh Van Ngo +4 more |
2012-06-19 |
$1,687,000 |
| 8171627 |
Method of forming an electronic device |
Bryon K. Hance, Brian D. White, Joseph William Wiseman, Allen L. Evans |
2012-05-08 |
$2,283,000 |
| 6955928 |
Closed loop residual gas analyzer process control technique |
— |
2005-10-18 |
$5,936,000 |
| 6809032 |
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques |
Frank Mauersberger, Peter J. Beckage, Paul R. Besser, Frederick N. Hause, Errol Todd Ryan +1 more |
2004-10-26 |
$3,793,000 |
| 6800494 |
Method and apparatus for controlling copper barrier/seed deposition processes |
Howard E. Castle |
2004-10-05 |
$3,728,000 |
| 6614064 |
Transistor having a gate stick comprised of a metal, and a method of making same |
Paul R. Besser |
2003-09-02 |
$4,831,000 |
| 6555479 |
Method for forming openings for conductive interconnects |
Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, John A. Iacoponi +1 more |
2003-04-29 |
$1,822,000 |
| 6514858 |
Test structure for providing depth of polish feedback |
Frederick N. Hause, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, John A. Iacoponi +1 more |
2003-02-04 |
$1,030,000 |
| 6489240 |
Method for forming copper interconnects |
John A. Iacoponi, Paul R. Besser, Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan +1 more |
2002-12-03 |
$4,258,000 |
| 6413846 |
Contact each methodology and integration scheme |
Paul R. Besser, Errol Todd Ryan, Frederick N. Hause, Frank Mauersberger, John A. Iacoponi +1 more |
2002-07-02 |
$3,406,000 |
| 6395100 |
Method of improving vacuum quality in semiconductor processing chambers |
Willie Rivera |
2002-05-28 |
$2,985,000 |
| 6376330 |
Dielectric having an air gap formed between closely spaced interconnect lines |
H. Jim Fulford, Robert Dawson, Fred N. Hause, Basab Bandyopadhyay, Mark W. Michael |
2002-04-23 |
$2,653,000 |
| 6353253 |
Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization |
Fred N. Hause, Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Mark W. Michael |
2002-03-05 |
$11,927,000 |
| 6326298 |
Substantially planar semiconductor topography using dielectrics and chemical mechanical polish |
Robert Dawson, Mark W. Michael, Basab Bandyopadhyay, H. Jim Fulford, Fred N. Hause |
2001-12-04 |
$4,361,000 |
| 6255215 |
Semiconductor device having silicide layers formed using a collimated metal layer |
Fred N. Hause, Charles E. May |
2001-07-03 |
$7,468,000 |
| 6211072 |
CVD Tin Barrier process with improved contact resistance |
— |
2001-04-03 |
$5,058,000 |
| 6208015 |
Interlevel dielectric with air gaps to lessen capacitive coupling |
Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, Mark W. Michael |
2001-03-27 |
$5,495,000 |
| 6191032 |
Thin titanium film as self-regulating filter for silicon migration into aluminum metal lines |
Don A. Tiffin, David Soza, Patrick L. Smith, Allen W. White, Tim Z. Hossain |
2001-02-20 |
$7,201,000 |
| 6156650 |
Method of releasing gas trapped during deposition |
Tim Z. Hossain, Berta Valdez, Renee S. Prusik, Amiya R. Ghatak-Roy |
2000-12-05 |
$3,995,000 |
| 6153833 |
Integrated circuit having interconnect lines separated by a dielectric having a capping layer |
Robert Dawson, Mark W. Michael, Basab Bandyopadhyay, H. Jim Fulford, Fred N. Hause |
2000-11-28 |
$3,768,000 |
| 6150721 |
Integrated circuit which uses a damascene process for producing staggered interconnect lines |
Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, Mark W. Michael |
2000-11-21 |
$5,742,000 |
| 6127264 |
Integrated circuit having conductors of enhanced cross-sectional area |
Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, Mark W. Michael |
2000-10-03 |
$5,403,000 |
| 6127719 |
Subfield conductive layer and method of manufacture |
H. Jim Fulford, Robert Dawson, Fred N. Hause, Basab Bandyopadhyay, Mark W. Michael |
2000-10-03 |
$5,403,000 |
| 6091149 |
Dissolvable dielectric method and structure |
Fred N. Hause, Basab Bandyopadhyay, Robert Dawson, H. Jim Fulford, Mark W. Michael |
2000-07-18 |
$10,732,000 |
