| 9425325 |
Electrically programmable and eraseable memory device |
Minh Van Ngo, Alexander H. Nickel, Jeong-Uk Huh |
2016-08-23 |
$15,016,000 |
| 8735960 |
High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance |
Minh Van Ngo, Alexander H. Nickel, Sung Jin Kim, Simon S. Chan, Ning Cheng |
2014-05-27 |
$3,831,000 |
| 8633074 |
Electrically programmable and erasable memory device and method of fabrication thereof |
Minh Van Ngo, Alexander H. Nickel, Jeong-Uk Huh |
2014-01-21 |
$2,229,000 |
| 8415256 |
Gap-filling with uniform properties |
Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Van Ngo, Hieu Pham +2 more |
2013-04-09 |
|
| 8202810 |
Low-H plasma treatment with N2 anneal for electronic memory devices |
Alexander H. Nickel, Allen L. Evans, Lu You, Minh Van Ngo, Pei-Yuan Gao +4 more |
2012-06-19 |
$1,687,000 |
| 8026169 |
Cu annealing for improved data retention in flash memory devices |
Lu You, Alexander H. Nickel, Minh Van Ngo, Hieu Pham, Erik Wilson +4 more |
2011-09-27 |
$6,329,000 |
| 7884030 |
Gap-filling with uniform properties |
Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Van Ngo, Hieu Pham +2 more |
2011-02-08 |
|
| 7776682 |
Ordered porosity to direct memory element formation |
Alexander H. Nickel, Suzette K. Pangrle, Steven C. Avanzino, Jeffrey A. Shields, Fei Wang +2 more |
2010-08-17 |
|
| 7534732 |
Semiconductor devices with copper interconnects and composite silicon nitride capping layers |
Minh Van Ngo, Erik Wilson, Hieu Pham, Robert A. Huertas, Lu You +2 more |
2009-05-19 |
$8,842,000 |
| 7256499 |
Ultra low dielectric constant integrated circuit system |
Lu You, Fei Wang, Lynne A. Okada |
2007-08-14 |
$3,919,000 |
| 7208418 |
Sealing sidewall pores in low-k dielectrics |
Lynne A. Okada, Fei Wang, Lu You |
2007-04-24 |
$10,633,000 |
| 7199416 |
Systems and methods for a memory and/or selection element formed within a recess in a metal line |
Nicholas H. Tripsas, Jeffrey A. Shields |
2007-04-03 |
$7,538,000 |
| 7169706 |
Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
Sergey Lopatin, Paul R. Besser, Alline F. Myers, Jeremias D. Romero, Lu You +1 more |
2007-01-30 |
$15,947,000 |
| 7129133 |
Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film |
Steven C. Avanzino |
2006-10-31 |
$7,094,000 |
| 7001840 |
Interconnect with multiple layers of conductive material with grain boundary between the layers |
Lu You, Fei Wang, Lynne A. Okada |
2006-02-21 |
$12,668,000 |
| 6998337 |
Thermal annealing for Cu seed layer enhancement |
— |
2006-02-14 |
$22,520,000 |
| 6992004 |
Implanted barrier layer to improve line reliability and method of forming same |
Paul R. Besser, Matthew S. Buynoski, Pin-Chin Connie Wang, Lu You, Sergey Lopatin +1 more |
2006-01-31 |
$15,487,000 |
| 6979642 |
Method of self-annealing conductive lines that separates grain size effects from alloy mobility |
Matthew S. Buynoski, Connie P. Wang, Paul R. Besser |
2005-12-27 |
$8,074,000 |
| 6756300 |
Method for forming dual damascene interconnect structure |
Fei Wang, Jerry Cheng, Lynne A. Okada, Lu You |
2004-06-29 |
$3,195,000 |
| 6664187 |
Laser thermal annealing for Cu seedlayer enhancement |
Minh Van Ngo |
2003-12-16 |
$3,174,000 |
| 6649034 |
Electro-chemical metal alloying for semiconductor manufacturing |
Amit P. Marathe, Pin-Chin Connie Wang |
2003-11-18 |
$4,875,000 |
| 6609946 |
Method and system for polishing a semiconductor wafer |
— |
2003-08-26 |
$4,773,000 |
| 6589408 |
Non-planar copper alloy target for plasma vapor deposition systems |
Pin-Chin Connie Wang, Paul R. Besser, Sergey Lopatin |
2003-07-08 |
$2,679,000 |
| 6583051 |
Method of manufacturing an amorphized barrier layer for integrated circuit interconnects |
Sergey Lopatin, Minh Van Ngo |
2003-06-24 |
$2,352,000 |
| 6566248 |
Graphoepitaxial conductor cores in integrated circuit interconnects |
Pin-Chin Connie Wang |
2003-05-20 |
$2,116,000 |
