Issued Patents All Time
Showing 25 most recent of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8629535 | Mask for forming integrated circuit | Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard Nguyen +1 more | 2014-01-14 |
| 8415256 | Gap-filling with uniform properties | Alexander H. Nickel, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo, Hieu Pham +2 more | 2013-04-09 |
| 8202810 | Low-H plasma treatment with N2 anneal for electronic memory devices | Alexander H. Nickel, Allen L. Evans, Minh Quoc Tran, Minh Van Ngo, Pei-Yuan Gao +4 more | 2012-06-19 |
| 8026169 | Cu annealing for improved data retention in flash memory devices | Alexander H. Nickel, Minh Quoc Tran, Minh Van Ngo, Hieu Pham, Erik Wilson +4 more | 2011-09-27 |
| 7884030 | Gap-filling with uniform properties | Alexander H. Nickel, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo, Hieu Pham +2 more | 2011-02-08 |
| 7534732 | Semiconductor devices with copper interconnects and composite silicon nitride capping layers | Minh Van Ngo, Erik Wilson, Hieu Pham, Robert A. Huertas, Hirokazu Tokuno +2 more | 2009-05-19 |
| 7521304 | Method for forming integrated circuit | Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard Nguyen +1 more | 2009-04-21 |
| 7494885 | Disposable spacer process for field effect transistor fabrication | Mario M. Pelella, Darin A. Chan, Kei-Leong Ho | 2009-02-24 |
| 7378310 | Method for manufacturing a memory device having a nanocrystal charge storage region | Connie P. Wang, Zoran Krivokapic, Suzette K. Pangrle, Robert J. Chiu | 2008-05-27 |
| 7309650 | Memory device having a nanocrystal charge storage region and method | Connie P. Wang, Zoran Krivokapic, Paul R. Besser, Suzette K. Pangrle | 2007-12-18 |
| 7256499 | Ultra low dielectric constant integrated circuit system | Fei Wang, Minh Quoc Tran, Lynne A. Okada | 2007-08-14 |
| 7208418 | Sealing sidewall pores in low-k dielectrics | Lynne A. Okada, Minh Quoc Tran, Fei Wang | 2007-04-24 |
| 7183198 | Method for forming a hardmask employing multiple independently formed layers of a capping material to reduce pinholes | Pei-Yuan Gao, Richard J. Huang | 2007-02-27 |
| 7169706 | Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition | Sergey Lopatin, Paul R. Besser, Alline F. Myers, Jeremias D. Romero, Minh Quoc Tran +1 more | 2007-01-30 |
| 7157335 | Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices | Ning Cheng, Minh Van Ngo, Hirokazu Tokuno, Angela T. Hui, Yi He +3 more | 2007-01-02 |
| 7038320 | Single damascene integration scheme for preventing copper contamination of dielectric layer | Fei Wang, Minh Van Ngo | 2006-05-02 |
| 7033960 | Multi-chamber deposition of silicon oxynitride film for patterning | Richard J. Huang, Pei-Yuan Gao | 2006-04-25 |
| 7001840 | Interconnect with multiple layers of conductive material with grain boundary between the layers | Minh Quoc Tran, Fei Wang, Lynne A. Okada | 2006-02-21 |
| 6992004 | Implanted barrier layer to improve line reliability and method of forming same | Paul R. Besser, Matthew S. Buynoski, Minh Quoc Tran, Pin-Chin Connie Wang, Sergey Lopatin +1 more | 2006-01-31 |
| 6939793 | Dual damascene integration scheme for preventing copper contamination of dielectric layer | Fei Wang, Christy Mei-Chu Woo | 2005-09-06 |
| 6900002 | Antireflective bi-layer hardmask including a densified amorphous carbon layer | Marina V. Plat, Marilyn I. Wright, Scott A. Bell | 2005-05-31 |
| 6893967 | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials | Marilyn I. Wright, Douglas J. Bonser, Kay Hellig | 2005-05-17 |
| 6875664 | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material | Richard J. Huang, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Cyrus E. Tabery | 2005-04-05 |
| 6864556 | CVD organic polymer film for advanced gate patterning | Marina V. Plat, Chih-Yuh Yang, Scott A. Bell, Richard J. Huang, Christopher F. Lyons +2 more | 2005-03-08 |
| 6803313 | Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes | Pei-Yuan Gao, Richard J. Huang | 2004-10-12 |