Issued Patents All Time
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7279410 | Method for forming inlaid structures for IC interconnections | Fei Wang, James Kai | 2007-10-09 |
| 7256499 | Ultra low dielectric constant integrated circuit system | Lu You, Fei Wang, Minh Quoc Tran | 2007-08-14 |
| 7208418 | Sealing sidewall pores in low-k dielectrics | Minh Quoc Tran, Fei Wang, Lu You | 2007-04-24 |
| 7001840 | Interconnect with multiple layers of conductive material with grain boundary between the layers | Minh Quoc Tran, Lu You, Fei Wang | 2006-02-21 |
| 6872663 | Method for reworking a multi-layer photoresist following an underlayer development | — | 2005-03-29 |
| 6846749 | N-containing plasma etch process with reduced resist poisoning | Calvin T. Gabriel, Ramkumar Subramanian | 2005-01-25 |
| 6767827 | Method for forming dual inlaid structures for IC interconnections | Fei Wang, James Kai | 2004-07-27 |
| 6756300 | Method for forming dual damascene interconnect structure | Fei Wang, Jerry Cheng, Minh Quoc Tran, Lu You | 2004-06-29 |
| 6713382 | Vapor treatment for repairing damage of low-k dielectric | Suzette K. Pangrle, Ecran Adem, Calvin T. Gabriel | 2004-03-30 |
| 6699792 | Polymer spacers for creating small geometry space and method of manufacture thereof | Fei Wang, Lu You | 2004-03-02 |
| 6660619 | Dual damascene metal interconnect structure with dielectric studs | Suzette K. Pangrle, Fei Wang | 2003-12-09 |
| 6656830 | Dual damascene with silicon carbide middle etch stop layer/ARC | Ramkumar Subramanian, Dawn Hopper, Fei Wang | 2003-12-02 |
| 6632707 | Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning | Fei Wang, Ramkumar Subramanian, James Kai, Calvin T. Gabriel, Lu You | 2003-10-14 |
| 6610608 | Plasma etching using combination of CHF3 and CH3F | Fei Wang, Calvin T. Gabriel | 2003-08-26 |
| 6603206 | Slot via filled dual damascene interconnect structure without middle etch stop layer | Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel | 2003-08-05 |
| 6599839 | Plasma etch process for nonhomogenous film | Calvin T. Gabriel, Dawn Hopper, Suzette K. Pangrle, Fei Wang | 2003-07-29 |
| 6583046 | Post-treatment of low-k dielectric for prevention of photoresist poisoning | Fei Wang, Calvin T. Gabriel | 2003-06-24 |
| 6534397 | Pre-treatment of low-k dielectric for prevention of photoresist poisoning | Fei Wang, Calvin T. Gabriel | 2003-03-18 |
| 6521524 | Via filled dual damascene structure with middle stop layer and method for making the same | Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel | 2003-02-18 |
| 6514860 | Integration of organic fill for dual damascene process | Fei Wang, James Kai | 2003-02-04 |
| 6495447 | Use of hydrogen doping for protection of low-k dielectric layers | Calvin T. Gabriel | 2002-12-17 |
| 6492272 | Carrier gas modification for use in plasma ashing of photoresist | Fei Wang | 2002-12-10 |
| 6475929 | Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant | Calvin T. Gabriel, Suzette K. Pangrle, Fei Wang | 2002-11-05 |
| 6472231 | Dielectric layer with treated top surface forming an etch stop layer and method of making the same | Calvin T. Gabriel | 2002-10-29 |
| 6465340 | Via filled dual damascene structure with middle stop layer and method for making the same | Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel | 2002-10-15 |