| 7279410 |
Method for forming inlaid structures for IC interconnections |
Fei Wang, James Kai |
2007-10-09 |
$8,436,000 |
| 7256499 |
Ultra low dielectric constant integrated circuit system |
Lu You, Fei Wang, Minh Quoc Tran |
2007-08-14 |
$3,919,000 |
| 7208418 |
Sealing sidewall pores in low-k dielectrics |
Minh Quoc Tran, Fei Wang, Lu You |
2007-04-24 |
$10,633,000 |
| 7001840 |
Interconnect with multiple layers of conductive material with grain boundary between the layers |
Minh Quoc Tran, Lu You, Fei Wang |
2006-02-21 |
$12,668,000 |
| 6872663 |
Method for reworking a multi-layer photoresist following an underlayer development |
— |
2005-03-29 |
$4,814,000 |
| 6846749 |
N-containing plasma etch process with reduced resist poisoning |
Calvin T. Gabriel, Ramkumar Subramanian |
2005-01-25 |
$16,896,000 |
| 6767827 |
Method for forming dual inlaid structures for IC interconnections |
Fei Wang, James Kai |
2004-07-27 |
$2,306,000 |
| 6756300 |
Method for forming dual damascene interconnect structure |
Fei Wang, Jerry Cheng, Minh Quoc Tran, Lu You |
2004-06-29 |
$3,195,000 |
| 6713382 |
Vapor treatment for repairing damage of low-k dielectric |
Suzette K. Pangrle, Ecran Adem, Calvin T. Gabriel |
2004-03-30 |
$4,272,000 |
| 6699792 |
Polymer spacers for creating small geometry space and method of manufacture thereof |
Fei Wang, Lu You |
2004-03-02 |
$3,635,000 |
| 6660619 |
Dual damascene metal interconnect structure with dielectric studs |
Suzette K. Pangrle, Fei Wang |
2003-12-09 |
$2,702,000 |
| 6656830 |
Dual damascene with silicon carbide middle etch stop layer/ARC |
Ramkumar Subramanian, Dawn Hopper, Fei Wang |
2003-12-02 |
$4,088,000 |
| 6632707 |
Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning |
Fei Wang, Ramkumar Subramanian, James Kai, Calvin T. Gabriel, Lu You |
2003-10-14 |
$7,133,000 |
| 6610608 |
Plasma etching using combination of CHF3 and CH3F |
Fei Wang, Calvin T. Gabriel |
2003-08-26 |
$4,773,000 |
| 6603206 |
Slot via filled dual damascene interconnect structure without middle etch stop layer |
Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel |
2003-08-05 |
$3,941,000 |
| 6599839 |
Plasma etch process for nonhomogenous film |
Calvin T. Gabriel, Dawn Hopper, Suzette K. Pangrle, Fei Wang |
2003-07-29 |
$3,092,000 |
| 6583046 |
Post-treatment of low-k dielectric for prevention of photoresist poisoning |
Fei Wang, Calvin T. Gabriel |
2003-06-24 |
$2,352,000 |
| 6534397 |
Pre-treatment of low-k dielectric for prevention of photoresist poisoning |
Fei Wang, Calvin T. Gabriel |
2003-03-18 |
$1,685,000 |
| 6521524 |
Via filled dual damascene structure with middle stop layer and method for making the same |
Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel |
2003-02-18 |
$2,713,000 |
| 6514860 |
Integration of organic fill for dual damascene process |
Fei Wang, James Kai |
2003-02-04 |
$1,030,000 |
| 6495447 |
Use of hydrogen doping for protection of low-k dielectric layers |
Calvin T. Gabriel |
2002-12-17 |
$3,175,000 |
| 6492272 |
Carrier gas modification for use in plasma ashing of photoresist |
Fei Wang |
2002-12-10 |
$2,246,000 |
| 6475929 |
Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant |
Calvin T. Gabriel, Suzette K. Pangrle, Fei Wang |
2002-11-05 |
$1,578,000 |
| 6472231 |
Dielectric layer with treated top surface forming an etch stop layer and method of making the same |
Calvin T. Gabriel |
2002-10-29 |
$1,498,000 |
| 6465340 |
Via filled dual damascene structure with middle stop layer and method for making the same |
Fei Wang, Ramkumar Subramanian, Calvin T. Gabriel |
2002-10-15 |
$861,000 |
