Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low-H plasma treatment with N2 anneal for electronic memory devices

Low-H plasma treatment with N2 anneal for electronic memory devices

US Patent 8202810 · Granted Jun 19, 2012

Estimated economic value: $1,687,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Composite electrode for a lithium or lithium-ion battery and production method t2025
Piperidinedione derivatives2025
GRP door manufacturing system2025
Multi-parameter data type frameworks for database environments and database syst2025
Display device and method of driving the same2025
Lobaric acid derivative having PTP-1B inhibitory activity, preparation method th2025
Molding apparatus for grp door skin2025
Electrolyte for lithium secondary battery and lithium secondary battery includin2025
Shared data induced quality control for a chemical mechanical planarization proc2025
Discovering candidate referential integrities in a database2024
Metal oxide varistor with reinforced electrodes2024
Method and apparatus for transmitting channel state information2024