Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor having a gate stick comprised of a metal, and a method of making same

Transistor having a gate stick comprised of a metal, and a method of making same

US Patent 6614064 · Granted Sep 2, 2003

Estimated economic value: $4,831,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Correlated electron material (CEM) devices with contact region sidewall insulati2021
Formation of correlated electron material (CEM) devices with restored sidewall r2020
Method for fabrication of a CEM device2020
Fabrication of correlated electron material (CEM) devices2020
Method for fabrication of a CEM device2020
Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS de2017
Method for integrating germanides in high performance integrated circuits2017
Air gap spacer integration for improved fin device performance2016
Contact integration for reduced interface and series contact resistance2016
Gate structures for transistor devices for CMOS applications and products2016
Multi-layer barrier layer for interconnect structure2016
Method for manufacturing a contact for a semiconductor component and related str2015