| 7220655 |
Method of forming an alignment mark on a wafer, and a wafer comprising same |
Jeffrey C. Haines, Michael E. Exterkamp |
2007-05-22 |
$14,345,000 |
| 6809032 |
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques |
Frank Mauersberger, Peter J. Beckage, Paul R. Besser, Errol Todd Ryan, William S. Brennan +1 more |
2004-10-26 |
$3,793,000 |
| 6661057 |
Tri-level segmented control transistor and fabrication method |
Robert Dawson, Mark I. Gardner, H. Jim Fulford, Mark W. Michael, Bradley T. Moore +1 more |
2003-12-09 |
|
| 6555479 |
Method for forming openings for conductive interconnects |
Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan, John A. Iacoponi +1 more |
2003-04-29 |
$1,822,000 |
| 6555892 |
Semiconductor device with reduced line-to-line capacitance and cross talk noise |
Manfred Horstmann, Karsten Wieczorek |
2003-04-29 |
$1,822,000 |
| 6552776 |
Photolithographic system including light filter that compensates for lens error |
Derick J. Wristers, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Bradley T. Moore +1 more |
2003-04-22 |
$3,266,000 |
| 6514858 |
Test structure for providing depth of polish feedback |
Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan, John A. Iacoponi +1 more |
2003-02-04 |
$1,030,000 |
| 6491799 |
Method for forming a thin dielectric layer |
Karsten Wieczorek, Manfred Horstmann |
2002-12-10 |
$2,246,000 |
| 6489240 |
Method for forming copper interconnects |
John A. Iacoponi, Paul R. Besser, Frank Mauersberger, Errol Todd Ryan, William S. Brennan +1 more |
2002-12-03 |
$4,258,000 |
| 6458678 |
Transistor formed using a dual metal process for gate and source/drain region |
Thomas E. Spikes, Jr., David Wu |
2002-10-01 |
$734,000 |
| 6429052 |
Method of making high performance transistor with a reduced width gate electrode and device comprising same |
Mark I. Gardner, John J. Bush |
2002-08-06 |
$1,934,000 |
| 6426262 |
Method of analyzing the effects of shadowing of angled halo implants |
Mark B. Fuselier, Jon D. Cheek, Marilyn I. Wright |
2002-07-30 |
$3,277,000 |
| 6413846 |
Contact each methodology and integration scheme |
Paul R. Besser, Errol Todd Ryan, Frank Mauersberger, William S. Brennan, John A. Iacoponi +1 more |
2002-07-02 |
$3,406,000 |
| 6410967 |
Transistor having enhanced metal silicide and a self-aligned gate electrode |
Mark I. Gardner, Charles E. May |
2002-06-25 |
$2,000,000 |
| 6410409 |
Implanted barrier layer for retarding upward diffusion of substrate dopant |
Mark I. Gardner, Robert Dawson, H. Jim Fulford, Mark W. Michael, Bradley T. Moore +1 more |
2002-06-25 |
$2,000,000 |
| 6403445 |
Enhanced trench isolation structure |
Mark I. Gardner, Charles E. May |
2002-06-11 |
$2,353,000 |
| 6380055 |
Dopant diffusion-retarding barrier region formed within polysilicon gate layer |
Mark I. Gardner, Robert Dawson, H. Jim Fulford, Mark W. Michael, Bradley T. Moore +1 more |
2002-04-30 |
$1,930,000 |
| 6376350 |
Method of forming low resistance gate electrode |
Michael Duane, Jeffrey C. Haines |
2002-04-23 |
$2,653,000 |
| 6372588 |
Method of making an IGFET using solid phase diffusion to dope the gate, source and drain |
Derick J. Wristers, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Mark W. Michael +1 more |
2002-04-16 |
$2,231,000 |
| 6358826 |
Device improvement by lowering LDD resistance with new spacer/silicide process |
Manfred Horstmann, Karsten Wieczorek |
2002-03-19 |
$4,163,000 |
| 6352885 |
Transistor having a peripherally increased gate insulation thickness and a method of fabricating the same |
Karsten Wieczorek, Manfred Horstmann |
2002-03-05 |
$11,927,000 |
| 6346463 |
Method for forming a semiconductor device with a tailored well profile |
Akif Sultan |
2002-02-12 |
$7,726,000 |
| 6337217 |
Method and apparatus for improved focus in optical processing |
Karen Turnquest |
2002-01-08 |
$11,293,000 |
| 6274894 |
Low-bandgap source and drain formation for short-channel MOS transistors |
Karsten Wieczorek, Manfred Horstmann |
2001-08-14 |
$3,163,000 |
| 6268637 |
Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication |
Mark I. Gardner, Charles E. May |
2001-07-31 |
$5,560,000 |
