| 9269710 |
Semiconductor devices having stressor regions and related fabrication methods |
Indradeep Sen |
2016-02-23 |
$655,000 |
| 8779529 |
Self-aligned silicidation for replacement gate process |
Indradeep Sen, Thorsten Kammler, Andreas Knorr |
2014-07-15 |
$3,357,000 |
| 8687417 |
Electronic device and method of biasing |
Ruigang Li, Jingrong Zhou, David Wu, Zhonghai Shi, James F. Buller +2 more |
2014-04-01 |
$6,826,000 |
| 8497179 |
Method of fabricating multi-fingered semiconductor devices on a common substrate |
— |
2013-07-30 |
$3,697,000 |
| 8426278 |
Semiconductor devices having stressor regions and related fabrication methods |
Indradeep Sen |
2013-04-23 |
$3,381,000 |
| 8377781 |
Transistor with asymmetric silicon germanium source region |
Jian Chen, James F. Buller |
2013-02-19 |
$2,503,000 |
| 8361870 |
Self-aligned silicidation for replacement gate process |
Indradeep Sen, Thorsten Kammler, Andreas Knorr |
2013-01-29 |
$4,433,000 |
| 8076703 |
Semiconductor device and methods for fabricating same |
James F. Buller, Kaveri Mathur |
2011-12-13 |
$8,972,000 |
| 8035098 |
Transistor with asymmetric silicon germanium source region |
Jian Chen, James F. Buller |
2011-10-11 |
$4,727,000 |
| 7793240 |
Compensating for layout dimension effects in semiconductor device modeling |
Jian Chen, Mark W. Michael, Jingrong Zhou |
2010-09-07 |
$6,542,000 |
| 7761838 |
Method for fabricating a semiconductor device having an extended stress liner |
Zhonghai Shi, Mark W. Michael, David Wu, James F. Buller, Jingrong Zhou |
2010-07-20 |
$12,141,000 |
| 7638837 |
Stress enhanced semiconductor device and methods for fabricating same |
Mark W. Michael, David Wu |
2009-12-29 |
$14,633,000 |
| 7633103 |
Semiconductor device and methods for fabricating same |
James F. Buller, Kaveri Mathur |
2009-12-15 |
$19,433,000 |
| 7598161 |
Method of forming transistor devices with different threshold voltages using halo implant shadowing |
Jingrong Zhou, Mark W. Michael, David Wu, James F. Buller |
2009-10-06 |
$63,123,000 |
| 7582493 |
Distinguishing between dopant and line width variation components |
James F. Buller, David Wu |
2009-09-01 |
$18,287,000 |
| 7504270 |
Methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing same |
David Wu, Mark W. Michael, Jingrong Zhou |
2009-03-17 |
$2,427,000 |
| 7176095 |
Bi-modal halo implantation |
David Wu, Wen-Jie Qi, Mark B. Fuselier |
2007-02-13 |
$17,943,000 |
| 6979635 |
Method of forming miniaturized polycrystalline silicon gate electrodes using selective oxidation |
Qi Xiang, Bin Yu |
2005-12-27 |
$8,074,000 |
| 6921704 |
Method for improving MOS mobility |
David Wu, Bin Yu |
2005-07-26 |
$17,204,000 |
| 6864516 |
SOI MOSFET junction degradation using multiple buried amorphous layers |
Andy Wei, David Wu |
2005-03-08 |
$6,020,000 |
| 6777281 |
Maintaining LDD series resistance of MOS transistors by retarding dopant segregation |
Daniel Kadosh, Scott Luning, David Wu |
2004-08-17 |
$3,269,000 |
| 6727136 |
Formation of ultra-shallow depth source/drain extensions for MOS transistors |
James F. Buller, Derick J. Wristers, David Wu |
2004-04-27 |
$2,236,000 |
| 6642536 |
Hybrid silicon on insulator/bulk strained silicon technology |
Qi Xiang |
2003-11-04 |
$3,831,000 |
| 6593623 |
Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
— |
2003-07-15 |
$1,952,000 |
| 6475885 |
Source/drain formation with sub-amorphizing implantation |
— |
2002-11-05 |
$1,578,000 |
