| 7793240 |
Compensating for layout dimension effects in semiconductor device modeling |
Akif Sultan, Mark W. Michael, Jingrong Zhou |
2010-09-07 |
| 7473623 |
Providing stress uniformity in a semiconductor device |
Mark W. Michael |
2009-01-06 |
| 6248629 |
Process for fabricating a flash memory device |
Yow-Juang Liu, Gu-Fung David Tsuei |
2001-06-19 |
| 6011718 |
Current source programming of electrically programmable memory arrays |
Lee Cleveland |
2000-01-04 |
| 5981994 |
Method and semiconductor circuit for maintaining integrity of field threshold voltage requirements |
David Kuan-Yu Liu, Ming Sang Kwan |
1999-11-09 |
| 5946234 |
Constant current source programming of electrically programmable memory arrays |
Lee Cleveland |
1999-08-31 |
| 5854108 |
Method and system for providing a double diffuse implant junction in a flash device |
James Hsu, Yuan Tang |
1998-12-29 |
| 5814853 |
Sourceless floating gate memory device and method of storing data |
— |
1998-09-29 |
| 5793249 |
System for providing tight program/erase speeds that are insensitive to process variations |
Lee Cleveland |
1998-08-11 |
| 5776811 |
Simplified process for fabricating flash eeprom cells |
Hsingya Arthur Wang, Paul J. Steffan |
1998-07-07 |
| 5652447 |
Flash EEPROM memory with reduced column leakage current |
Yuan Tang, Scott Luning, Salvatore F. Cagnina |
1997-07-29 |
| 5650964 |
Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge |
James Hsu, Shengwen Luan, Yuan Tang, David Kuan-Yu Liu, Michael A. Van Buskirk |
1997-07-22 |
| 5608672 |
Correction method leading to a uniform threshold voltage distribution for a flash eprom |
Yuan Tang, Chung K. Chang |
1997-03-04 |
| 5598369 |
Flash EEPROM array with floating substrate erase operation |
Nader Radjy |
1997-01-28 |
| 5579261 |
Reduced column leakage during programming for a flash memory array |
Nader Radjy, Lee Cleveland, Shane Hollmer |
1996-11-26 |
| 5576991 |
Multistepped threshold convergence for a flash memory array |
Nader Radjy, Lee Cleveland, Shane Hollmer |
1996-11-19 |
| 5561620 |
Flash EEPROM array with floating substrate erase operation |
Nader Radjy |
1996-10-01 |
| 5541875 |
High energy buried layer implant to provide a low resistance p-well in a flash EPROM array |
David Kuan-Yu Liu |
1996-07-30 |
| 5521867 |
Adjustable threshold voltage conversion circuit |
Lee Cleveland, Shane Hollmer, Ming Sang Kwan, David Kuan-Yu Liu, Nader Radjy |
1996-05-28 |
| 5482881 |
Method of making flash EEPROM memory with reduced column leakage current |
Yuan Tang, Scott Luning, Salvatore F. Cagnina |
1996-01-09 |