AK

Andreas Knorr

Globalfoundries: 34 patents #73 of 4,424Top 2%
Infineon Technologies Ag: 16 patents #716 of 7,486Top 10%
IBM: 13 patents #8,581 of 70,183Top 15%
BG Bhs Corrugated Maschinen-Und Anlagenbau Gmbh: 5 patents #12 of 68Top 20%
GU Globalfoundries U.S.: 4 patents #133 of 665Top 20%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
AM AMD: 1 patents #5,683 of 9,279Top 65%
GP Globalfoundries Singapore Pte.: 1 patents #427 of 828Top 55%
📍 Saratoga Springs, NY: #7 of 363 inventorsTop 2%
🗺 New York: #1,187 of 115,490 inventorsTop 2%
Overall (All Time): #32,637 of 4,157,543Top 1%
66
Patents All Time

Issued Patents All Time

Showing 1–25 of 66 patents

Patent #TitleCo-InventorsDate
12408396 Field-effect transistors with heterogenous doped regions in the substrate of a silicon-on-insulator substrate Richard F. Taylor, III 2025-09-02
12159926 Lateral bipolar transistor Haiting Wang, Alexander M. Derrickson, Jagar Singh, Vibhor Jain, Alexander L. Martin +2 more 2024-12-03
11837653 Lateral bipolar junction transistor including a stress layer and method Jagar Singh, Alexander M. Derrickson, Alvin J. Joseph, Judson R. Holt 2023-12-05
11810969 Lateral bipolar transistor Haiting Wang, Alexander M. Derrickson, Jagar Singh, Vibhor Jain, Alexander L. Martin +2 more 2023-11-07
10937693 Methods, apparatus and system for a local interconnect feature over an active region in a finFET device Ruilong Xie, Haiting Wang, Hui Zang 2021-03-02
10644157 Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods Julien Frougier, Ruilong Xie, Srikanth B. Samavedam 2020-05-05
10475899 Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby Ruilong Xie, Julien Frougier, Hui Zang, Min-hwa Chi 2019-11-12
10424657 Tri-gate FinFET device Ruilong Xie 2019-09-24
10411010 Tall single-fin FIN-type field effect transistor structures and methods Ruilong Xie, Murat Kerem Akarvardar, Lars Liebmann, Nigel G. Cave 2019-09-10
10381459 Transistors with H-shaped or U-shaped channels and method for forming the same Ruilong Xie, Julien Frougier, Yi Qi, Nigel G. Cave, Edward J. Nowak 2019-08-13
10304833 Method of forming complementary nano-sheet/wire transistor devices with same depth contacts Puneet Harischandra Suvarna, Bipul C. Paul, Ruilong Xie, Bartlomiej Jan Pawlak, Lars Liebmann +2 more 2019-05-28
10290549 Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward J. Nowak, Nigel G. Cave +2 more 2019-05-14
10164041 Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby Ruilong Xie, Julien Frougier, Hui Zang, Min-hwa Chi 2018-12-25
10062617 Method and structure for SRB elastic relaxation Ruilong Xie, Murat Kerem Akarvardar 2018-08-28
9929157 Tall single-fin fin-type field effect transistor structures and methods Ruilong Xie, Murat Kerem Akarvardar, Lars Liebmann, Nigel G. Cave 2018-03-27
9780178 Methods of forming a gate contact above an active region of a semiconductor device Ruilong Xie, Andre P. Labonte 2017-10-03
9691897 Three-dimensional semiconductor transistor with gate contact in active region Ruilong Xie, Andre P. Labonte 2017-06-27
9614056 Methods of forming a tri-gate FinFET device Ruilong Xie 2017-04-04
9576857 Method and structure for SRB elastic relaxation Ruilong Xie, Murat Kerem Akarvardar 2017-02-21
9496354 Semiconductor devices with dummy gate structures partially on isolation regions Ruilong Xie, Xiuyu Cai, Ajey Poovannummoottil Jacob, Christopher M. Prindle 2016-11-15
9443976 Integrated circuit product comprising lateral and vertical FinFet devices Ruilong Xie 2016-09-13
9412695 Interconnect structures and methods of fabrication Ruilong Xie, Hiroaki Niimi 2016-08-09
9401408 Confined early epitaxy with local interconnect capability Ruilong Xie 2016-07-26
9336345 Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits Soon Yoeng Tan, Srinidhi Ramamoorthy, Angeline Ho Chye Ee, Frank Scott Johnson 2016-05-10
9318342 Methods of removing fins for finfet semiconductor devices Ruilong Xie, Ajey Poovannummoottil Jacob, Michael Hargrove 2016-04-19