HN

Hiroaki Niimi

TI Texas Instruments: 73 patents #71 of 12,488Top 1%
Globalfoundries: 30 patents #85 of 4,424Top 2%
IBM: 29 patents #3,528 of 70,183Top 6%
TL Tokyo Electron Limited: 8 patents #950 of 5,567Top 20%
PA Panasonic: 1 patents #13,264 of 21,108Top 65%
SF SUNY Research Foundation: 1 patents #469 of 1,165Top 45%
Overall (All Time): #8,911 of 4,157,543Top 1%
126
Patents All Time

Issued Patents All Time

Showing 25 most recent of 126 patents

Patent #TitleCo-InventorsDate
12400963 Conductive superlattice structures and methods of forming the same Gerrit J. Leusink, Hiroki Maehara, Einstein Noel Abarra, Naoki Watanabe 2025-08-26
12288692 Method of forming a FET structure by selective deposition of film on source/drain contact Yun Han, Alok Ranjan, Peter Ventzek, Andrew Metz 2025-04-29
12284820 Dual metal wrap-around contacts for semiconductor devices Kandabara Tapily, Takahiro Hakamata 2025-04-22
12237216 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, Shihsheng Chang, Ying Trickett, Eric Chih-Fang Liu, Yun Han +5 more 2025-02-25
11562906 Low resistance source drain contact formation with trench metastable alloys and laser annealing Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh 2023-01-24
11374101 Dual metal wrap-around contacts for semiconductor devices Kandabara Tapily, Takahiro Hakamata 2022-06-28
11264274 Reverse contact and silicide process for three-dimensional logic devices Jeffrey Smith, Jodi Grzeskowiak, Daniel Chanemougame, Lars Liebmann, Kandabara Tapily +2 more 2022-03-01
11201089 Robust low-k bottom spacer for VFET Pietro Montanini, Kangguo Cheng 2021-12-14
11171060 Dual metal contacts with ruthenium metal plugs for semiconductor devices Gyanaranjan Pattanaik 2021-11-09
10978353 High mobility transistors Manoj Mehrotra, Charles Frank Machala, III, Rick L. Wise 2021-04-13
10943992 Transistor having straight bottom spacers Kangguo Cheng, Christopher J. Waskiewicz, Michael P. Belyansky, Brent A. Anderson, Muthumanickam Sankarapandian +1 more 2021-03-09
10879133 Replacement metal gate process for CMOS integrated circuits Seung-Chul Song 2020-12-29
10854510 Titanium silicide formation in a narrow source-drain contact Min Gyu Sung, Kwanyong LIM 2020-12-01
10833019 Dual metal-insulator-semiconductor contact structure and formulation method Takashi Ando, Tenko Yamashita 2020-11-10
10818599 Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts Shariq Siddiqui, Tenko Yamashita 2020-10-27
10804270 Contact formation through low-tempearature epitaxial deposition in semiconductor devices Oleg Gluschenkov, Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh 2020-10-13
10692868 Contact formation through low-temperature epitaxial deposition in semiconductor devices Oleg Gluschenkov, Shogo Mochizuki, Tenko Yamashita, Chun-Chen Yeh 2020-06-23
10685961 Contact formation in semiconductor devices Oleg Gluschenkov, Zuoguang Liu, Joseph S. Washington, Tenko Yamashita 2020-06-16
10643894 Surface area and Schottky barrier height engineering for contact trench epitaxy Jody A. Fronheiser, Shogo Mochizuki, Balasubramanian Pranatharthiharan, Mark V. Raymond, Tenko Yamashita 2020-05-05
10643893 Surface area and Schottky barrier height engineering for contact trench epitaxy Jody A. Fronheiser, Shogo Mochizuki, Balasubramanian Pranatharthiharan, Mark V. Raymond, Tenko Yamashita 2020-05-05
10586769 Contact formation in semiconductor devices Oleg Gluschenkov, Jiseok Kim, Zuoguang Liu, Shogo Mochizuki 2020-03-10
10535606 Dual metal-insulator-semiconductor contact structure and formulation method Takashi Ando, Tenko Yamashita 2020-01-14
10510617 CMOS VFET contacts with trench solid and liquid phase epitaxy Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Tenko Yamashita 2019-12-17
10475904 Methods of forming merged source/drain regions on integrated circuit products Steven Bentley, Romain Lallement, Brent A. Anderson, Junli Wang, Muthumanickam Sankarapandian 2019-11-12
10439040 Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget James Joseph Chambers 2019-10-08