| 11794627 |
Folding camping apparatus |
— |
2023-10-24 |
|
| 10978353 |
High mobility transistors |
Manoj Mehrotra, Charles Frank Machala, III, Hiroaki Niimi |
2021-04-13 |
$33,270,000 |
| 10163725 |
High mobility transistors |
Manoj Mehrotra, Charles Frank Machala, III, Hiroaki Niimi |
2018-12-25 |
|
| 10026815 |
Ultrashallow emitter formation using ALD and high temperature short time annealing |
Hiroshi Yasuda |
2018-07-17 |
$21,837,000 |
| 9929714 |
Temperature compensated bulk acoustic wave resonator with a high coupling coefficient |
Stuart M. Jacobsen, Maria Wang, Ricky Alan Jackson, Nicholas Stephen Dellas, Django Trombley |
2018-03-27 |
$33,589,000 |
| 9805986 |
High mobility transistors |
Hiroaki Niimi, Manoj Mehrotra |
2017-10-31 |
$20,806,000 |
| 9496262 |
High mobility transistors |
Manoj Mehrotra, Charles Frank Machala, III, Hiroaki Niimi |
2016-11-15 |
$11,505,000 |
| 9396948 |
Layer transfer of silicon onto III-nitride material for heterogenous integration |
Naveen Tipirneni, Sameer Pendharkar |
2016-07-19 |
$10,444,000 |
| 9324717 |
High mobility transistors |
Hiroaki Niimi, Manoj Mehrotra |
2016-04-26 |
$19,775,000 |
| 9053966 |
Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channels |
Weize Xiong, Cloves Rinn Cleavelin, Angelo Pinto |
2015-06-09 |
$10,012,000 |
| 8872220 |
Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels |
Weize Xiong, Cloves Rinn Cleavelin, Angelo Pinto |
2014-10-28 |
$12,774,000 |
| 8846487 |
Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology |
Angelo Pinto, Periannan Chidambaram |
2014-09-30 |
$10,935,000 |
| 8835263 |
Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe |
Johan W. Weijtmans, Jiong-Ping Lu |
2014-09-16 |
$9,951,000 |
| 8828835 |
Ultrashallow emitter formation using ALD and high temperature short time annealing |
Hiroshi Yasuda |
2014-09-09 |
$5,271,000 |
| 8759198 |
Accelerated furnace ramp rates for reduced slip |
Bradley David Sucher |
2014-06-24 |
$8,351,000 |
| 8410519 |
Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels |
Weize Xiong, Cloves Rinn Cleavelin, Angelo Pinto |
2013-04-02 |
$8,636,000 |
| 8138035 |
Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels |
Weize Xiong, Cloves Rinn Cleavelin, Angelo Pinto |
2012-03-20 |
$6,746,000 |
| 8053322 |
Epitaxial deposition-based processes for reducing gate dielectric thinning at trench edges and integrated circuits therefrom |
Vladimir F. Drobny, Amitava Chatterjee, Phillipp Steinmann |
2011-11-08 |
$4,653,000 |
| 7897994 |
Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate |
Weize Xiong, Cloves Rinn Cleavelin, Angelo Pinto |
2011-03-01 |
$7,861,000 |
| 7767510 |
Semiconductor device made by the method of producing hybrid orientnation (100) strained silicon with (110) silicon |
Angelo Pinto |
2010-08-03 |
$11,414,000 |
| 7443007 |
Trench isolation structure having an implanted buffer layer |
Mark S. Rodder |
2008-10-28 |
$6,287,000 |
| 7371658 |
Trench isolation structure and a method of manufacture therefor |
Mark S. Rodder |
2008-05-13 |
$9,295,000 |
| 7163878 |
Ultra-shallow arsenic junction formation in silicon germanium |
Puneet Kohli, Mark S. Rodder, Amitabh Jain |
2007-01-16 |
$14,105,000 |
| 7160782 |
Method of manufacture for a trench isolation structure having an implanted buffer layer |
Mark S. Rodder |
2007-01-09 |
$14,476,000 |
| 6699745 |
Capacitor and memory structure and method |
Aditi Banerjee, Darius Crenshaw |
2004-03-02 |
$23,782,000 |