| 12336299 |
Electrostatic discharge guard ring with snapback protection |
Sunglyong Kim, David LaFonteese, Seetharaman Sridhar |
2025-06-17 |
|
| 12166119 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2024-12-10 |
$53,437,000 |
| 12094970 |
Electrostatic discharge guard ring with complementary drain extended devices |
Sunglyong Kim, Seetharaman Sridhar, David LaFonteese |
2024-09-17 |
$65,071,000 |
| 12046666 |
Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
Chang Soo Suh, Naveen Tipirneni, Jungwoo Joh |
2024-07-23 |
$32,250,000 |
| 12034074 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2024-07-09 |
$47,758,000 |
| 11978814 |
Superlattice photo detector |
He Lin |
2024-05-07 |
$43,677,000 |
| 11769824 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2023-09-26 |
$35,904,000 |
| 11764208 |
Electrostatic discharge guard ring with snapback protection |
Sunglyong Kim, David LaFonteese, Seetharaman Sridhar |
2023-09-19 |
$27,231,000 |
| 11721738 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Guru Mathur |
2023-08-08 |
|
| 11482613 |
Hybrid active-field gap extended drain MOS transistor |
John Lin |
2022-10-25 |
$66,705,000 |
| 11456381 |
Drain-extended transistor |
Meng-Chia Lee, Sunglyong Kim, Seetharaman Sridhar |
2022-09-27 |
$42,479,000 |
| 11355597 |
Transistor with source field plates and non-overlapping gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2022-06-07 |
$27,967,000 |
| 11322610 |
High voltage lateral junction diode device |
Sunglyong Kim, Seetharaman Sridhar |
2022-05-03 |
$38,452,000 |
| 11239318 |
High-voltage drain expended MOS transistor |
Sunglyong Kim, Seetharaman Sridhar |
2022-02-01 |
$20,446,000 |
| 11189721 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2021-11-30 |
$95,449,000 |
| 11177378 |
HEMT having conduction barrier between drain fingertip and source |
Jungwoo Joh, Naveen Tipirneni, Chang Soo Suh |
2021-11-16 |
$40,327,000 |
| 11158750 |
Superlattice photo detector |
He Lin |
2021-10-26 |
$44,233,000 |
| 11152459 |
Lateral MOSFET with buried drain extension layer |
Marie Denison, Philip L. Hower |
2021-10-19 |
$43,571,000 |
| 11067620 |
HEMT wafer probe current collapse screening |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2021-07-20 |
$33,717,000 |
| 11049960 |
Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
Chang Soo Suh, Naveen Tipirneni, Jungwoo Joh |
2021-06-29 |
$28,332,000 |
| 11004971 |
LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region |
Ming-Yeh Chuang |
2021-05-11 |
$37,394,000 |
| 10964803 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2021-03-30 |
$42,681,000 |
| 10957774 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Guru Mathur |
2021-03-23 |
$44,168,000 |
| 10950720 |
Electrostatic discharge guard ring with complementary drain extended devices |
Sunglyong Kim, Seetharaman Sridhar, David LaFonteese |
2021-03-16 |
$58,029,000 |
| 10937905 |
Transistor having double isolation with one floating isolation |
Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +1 more |
2021-03-02 |
$42,720,000 |