| 12166119 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Sameer Pendharkar |
2024-12-10 |
$53,437,000 |
| 11769824 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Sameer Pendharkar |
2023-09-26 |
$35,904,000 |
| 11067620 |
HEMT wafer probe current collapse screening |
Dong Seup Lee, Jungwoo Joh, Sameer Pendharkar |
2021-07-20 |
$33,717,000 |
| 10964803 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Sameer Pendharkar |
2021-03-30 |
$42,681,000 |
| 10861943 |
Transistor with multiple GaN-based alloy layers |
Dong Seup Lee, Jungwoo Joh, Sameer Pendharkar |
2020-12-08 |
$35,035,000 |
| 10714474 |
High voltage CMOS with triple gate oxide |
Binghua Hu, Sameer Pendharkar, Seetharaman Sridhar, Jarvis Benjamin Jacobs |
2020-07-14 |
$27,411,000 |
| 10312095 |
Recessed solid state apparatuses |
Dong Seup Lee, Yoshikazu Kondo, Sameer Pendharkar |
2019-06-04 |
$27,113,000 |
| 10134596 |
Recessed solid state apparatuses |
Dong Seup Lee, Yoshikazu Kondo, Sameer Pendharkar |
2018-11-20 |
$20,577,000 |
| 9865507 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Sameer Pendharkar, Amitava Chatterjee |
2018-01-09 |
$13,602,000 |
| 9842895 |
Single photomask high precision thin film resistor |
Fuchao Wang, Duofeng Yue |
2017-12-12 |
$24,947,000 |
| 9741718 |
High voltage CMOS with triple gate oxide |
Binghua Hu, Sameer Pendharkar, Seetharaman Sridhar, Jarvis Benjamin Jacobs |
2017-08-22 |
$8,817,000 |
| 9431302 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Sameer Pendharkar, Amitava Chatterjee |
2016-08-30 |
$12,944,000 |
| 9412668 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Sameer Pendharkar, Amitava Chatterjee |
2016-08-09 |
$15,765,000 |
| 9305688 |
Single photomask high precision thin film resistor |
Fuchao Wang, Duofeng Yue |
2016-04-05 |
$12,005,000 |
| 9184163 |
Low cost transistors |
Sameer Pendharkar |
2015-11-10 |
$15,007,000 |
| 9117687 |
High voltage CMOS with triple gate oxide |
Binghua Hu, Sameer Pendharkar, Seetharaman Sridhar, Jarvis Benjamin Jacobs |
2015-08-25 |
$11,197,000 |
| 9117691 |
Low cost transistors |
Sameer Pendharkar |
2015-08-25 |
$11,197,000 |
| 9076760 |
JFET having width defined by trench isolation |
Binghua Hu, Sameer Pendharkar |
2015-07-07 |
$9,588,000 |
| 9064726 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Sameer Pendharkar, Amitava Chatterjee |
2015-06-23 |
$18,712,000 |
| 8946805 |
Reduced area single poly EEPROM |
Jozef Mitros, Keith Jarreau |
2015-02-03 |
$21,082,000 |
| 8933510 |
DEMOS formed with a through gate implant |
Amitava Chatterjee, Imran Khan |
2015-01-13 |
$22,709,000 |
| 8878283 |
Quasi-vertical gated NPN-PNP ESD protection device |
Marie Denison |
2014-11-04 |
$8,927,000 |
| 8530296 |
High voltage transistor using diluted drain |
Sameer Pendharkar, Binghua Hu, Qingfeng Wang |
2013-09-10 |
$8,150,000 |
| 8399924 |
High voltage transistor using diluted drain |
Sameer Pendharkar, Binghua Hu, Qingfeng Wang |
2013-03-19 |
$17,245,000 |
| 8134212 |
Implanted well breakdown in high voltage devices |
Seetharaman Sridhar, James Robert Todd |
2012-03-13 |
$8,777,000 |