| 11581309 |
Tracking temperature compensation of an x/y stress independent resistor |
Michael Szelong, Tobias Bernhard Fritz, Ralf Brederlow |
2023-02-14 |
$35,706,000 |
| 11374124 |
Protection of drain extended transistor field oxide |
Xiaoju Wu, Henry Litzmann Edwards, Binghua Hu |
2022-06-28 |
$26,335,000 |
| 11257814 |
Tracking temperature compensation of an x/y stress independent resistor |
Michael Szelong, Tobias Bernhard Fritz, Ralf Brederlow |
2022-02-22 |
$26,617,000 |
| 11152505 |
Drain extended transistor |
Alexei Sadovnikov, Andrew Strachan, Henry Litzmann Edwards, Dhanoop Varghese, Xiaoju Wu +1 more |
2021-10-19 |
$43,571,000 |
| 10903356 |
LDMOS device with body diffusion self-aligned to gate |
Henry Litzmann Edwards, Binghua Hu |
2021-01-26 |
$32,191,000 |
| 10879387 |
Drain centered LDMOS transistor with integrated dummy patterns |
Henry Litzmann Edwards, Binghua Hu, Xiaoju Wu, Stephanie L. Hilbun |
2020-12-29 |
$32,545,000 |
| 10861948 |
Drift region implant self-aligned to field relief oxide with sidewall dielectric |
Henry Litzmann Edwards, Binghua Hu |
2020-12-08 |
$35,035,000 |
| 10748818 |
Dynamic biasing to mitigate electrical stress in integrated resistors |
Tathagata Chatterjee, Steven Loveless, Andrew Strachan |
2020-08-18 |
$31,996,000 |
| 10497787 |
Drift region implant self-aligned to field relief oxide with sidewall dielectric |
Henry Litzmann Edwards, Binghua Hu |
2019-12-03 |
$29,401,000 |
| 10461182 |
Drain centered LDMOS transistor with integrated dummy patterns |
Henry Litzmann Edwards, Binghua Hu, Xiaoju Wu, Stephanie L. Hilbun |
2019-10-29 |
$25,755,000 |
| 10096685 |
Drift region implant self-aligned to field relief oxide with sidewall dielectric |
Henry Litzmann Edwards, Binghua Hu |
2018-10-09 |
$44,383,000 |
| 9887288 |
LDMOS device with body diffusion self-aligned to gate |
Henry Litzmann Edwards, Binghua Hu |
2018-02-06 |
$38,939,000 |
| 9698246 |
LDMOS device with graded body doping |
Henry Litzmann Edwards |
2017-07-04 |
|
| 9583612 |
Drift region implant self-aligned to field relief oxide with sidewall dielectric |
Henry Litzmann Edwards, Binghua Hu |
2017-02-28 |
$12,848,000 |
| 9461046 |
LDMOS device with graded body doping |
Henry Litzmann Edwards |
2016-10-04 |
$25,390,000 |
| 8134212 |
Implanted well breakdown in high voltage devices |
Pinghai Hao, Seetharaman Sridhar |
2012-03-13 |
$8,777,000 |
| 7618870 |
Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof |
Shanjen Pan, Sameer Pendharkar |
2009-11-17 |
$32,581,000 |
| 7498652 |
Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof |
Shanjen Pan, Sameer Pendharkar |
2009-03-03 |
$8,492,000 |
| 7262471 |
Drain extended PMOS transistor with increased breakdown voltage |
Shanjen Pan, Sameer Pendharkar |
2007-08-28 |
$14,951,000 |
| 7208364 |
Methods of fabricating high voltage devices |
Shanjen Pan, Sameer Pendharkar, Pinghai Hao |
2007-04-24 |
$15,053,000 |
| 7112480 |
Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devices |
Shanjen Pan, Sameer Pendharkar |
2006-09-26 |
$13,551,000 |
| 7005354 |
Depletion drain-extended MOS transistors and methods for making the same |
Shanjen Pan, Sameer Pendharkar, Tsutomu Kubota, Pinghai Hao |
2006-02-28 |
$14,437,000 |
| 6969901 |
Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devices |
Shanjen Pan, Sameer Pendharkar |
2005-11-29 |
$13,874,000 |
| 6803282 |
Methods for fabricating low CHC degradation mosfet transistors |
Jozef Mitros, Shanjen Pan, Tsutomu Kubota |
2004-10-12 |
$15,498,000 |
| 6025231 |
Self aligned DMOS transistor and method of fabrication |
Louis N. Hutter, John P. Erdeljac |
2000-02-15 |
$157,512,000 |