Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12211835 | Group III-V IC with different sheet resistance 2-DEG resistors | Hiroyuki Tomomatsu | 2025-01-28 |
| 12166119 | Gallium nitride transistor with a doped region | Jungwoo Joh, Pinghai Hao, Sameer Pendharkar | 2024-12-10 |
| 12142639 | Electronic device with gallium nitride transistors and method of making same | Qhalid Fareed, Nicholas Stephen Dellas | 2024-11-12 |
| 11978790 | Normally-on gallium nitride based transistor with p-type gate | Chang Soo Suh, Jungwoo Joh, Shoji Wada, Karen Hildegard Ralston Kirmse | 2024-05-07 |
| 11888027 | Monolithic integration of high and low-side GaN FETs with screening back gating effect | Qhalid Fareed, Sridhar Seetharaman, Jungwoo Joh, Chang Soo Suh | 2024-01-30 |
| 11769824 | Gallium nitride transistor with a doped region | Jungwoo Joh, Pinghai Hao, Sameer Pendharkar | 2023-09-26 |
| 11742390 | Electronic device with gallium nitride transistors and method of making same | Qhalid Fareed, Nicholas Stephen Dellas | 2023-08-29 |
| 11527619 | Nitride-based semiconductor layer sharing between transistors | — | 2022-12-13 |
| 11508830 | Transistor with buffer structure having carbon doped profile | Nicholas Stephen Dellas, Andinet Tefera Desalegn | 2022-11-22 |
| 11067620 | HEMT wafer probe current collapse screening | Jungwoo Joh, Pinghai Hao, Sameer Pendharkar | 2021-07-20 |
| 10964803 | Gallium nitride transistor with a doped region | Jungwoo Joh, Pinghai Hao, Sameer Pendharkar | 2021-03-30 |
| 10861943 | Transistor with multiple GaN-based alloy layers | Jungwoo Joh, Pinghai Hao, Sameer Pendharkar | 2020-12-08 |
| 10707324 | Group IIIA-N HEMT with a tunnel diode in the gate stack | Chang Soo Suh, Jungwoo Joh, Naveen Tipirneni, Sameer Pendharkar | 2020-07-07 |
| 10381456 | Group IIIA-N HEMT with a tunnel diode in the gate stack | Chang Soo Suh, Jungwoo Joh, Naveen Tipirneni, Sameer Pendharkar | 2019-08-13 |
| 10312095 | Recessed solid state apparatuses | Yoshikazu Kondo, Pinghai Hao, Sameer Pendharkar | 2019-06-04 |
| 10192799 | Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices | Jungwoo Joh, Sameer Pendharkar | 2019-01-29 |
| 10134596 | Recessed solid state apparatuses | Yoshikazu Kondo, Pinghai Hao, Sameer Pendharkar | 2018-11-20 |
| 10014231 | Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices | Jungwoo Joh, Sameer Pendharkar | 2018-07-03 |
| 9741557 | Silicon nitride process for reduction of threshold shift | Nicholas Stephen Dellas, Naveen Tipirneni | 2017-08-22 |
| 9711594 | Improving linearity in semiconductor devices | Tomas Palacios | 2017-07-18 |