| 12034074 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2024-07-09 |
$47,758,000 |
| 11721738 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Sameer Pendharkar |
2023-08-08 |
|
| 11189721 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2021-11-30 |
$95,449,000 |
| 10957774 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Sameer Pendharkar |
2021-03-23 |
$44,168,000 |
| 10937905 |
Transistor having double isolation with one floating isolation |
Yongxi Zhang, Philip L. Hower, Sameer Pendharkar, John Lin, Scott Balster +1 more |
2021-03-02 |
$42,720,000 |
| 10811530 |
Trench gate trench field plate vertical mosfet |
Marie Denison, Sameer Pendharkar |
2020-10-20 |
$20,699,000 |
| 10608075 |
Analog capacitor on submicron pitch metal level |
Bhaskar Srinivasan, Stephen Arlon Meisner, Shih Chang Chang, Corinne Ann Gagnet |
2020-03-31 |
$21,150,000 |
| 10580775 |
Dual deep trenches for high voltage isolation |
Sameer Pendharkar, Binghua Hu, Alexei Sadovnikov |
2020-03-03 |
$18,993,000 |
| 10319809 |
Structures to avoid floating resurf layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, John Lin, Scott Balster, Constantin Bulucea +2 more |
2019-06-11 |
$23,253,000 |
| 10177215 |
Analog capacitor on submicron pitch metal level |
Bhaskar Srinivasan, Stephen Arlon Meisner, Shih Chang Chang, Corinne Ann Gagnet |
2019-01-08 |
$29,602,000 |
| 10163678 |
Sinker with a reduced width |
Binghua Hu, Sameer Pendharkar, Takehito Tamura |
2018-12-25 |
|
| 10157915 |
Capacitor with improved voltage coefficients |
Bhaskar Srinivasan, Shih Chang Chang, Poornika Fernandes, Haowen Bu |
2018-12-18 |
$47,234,000 |
| 10103258 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Sameer Pendharkar |
2018-10-16 |
$19,080,000 |
| 10062777 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2018-08-28 |
$21,208,000 |
| 9876071 |
Structures to avoid floating RESURF layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, John Lin, Scott Balster, Constantin Bulucea +2 more |
2018-01-23 |
$33,509,000 |
| 9786665 |
Dual deep trenches for high voltage isolation |
Sameer Pendharkar, Binghua Hu, Alexei Sadovnikov |
2017-10-10 |
$21,850,000 |
| 9660021 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2017-05-23 |
$14,174,000 |
| 9608105 |
Semiconductor structure with a doped region between two deep trench isolation structures |
Takehito Tamura, Binghua Hu, Sameer Pendharkar |
2017-03-28 |
$12,754,000 |
| 9577033 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2017-02-21 |
$11,965,000 |
| 9293357 |
Sinker with a reduced width |
Binghua Hu, Sameer Pendharkar, Takehito Tamura |
2016-03-22 |
$16,121,000 |
| 9240446 |
Vertical trench MOSFET device in integrated power technologies |
Marie Denison, Sameer Pendharkar |
2016-01-19 |
$12,158,000 |
| 9240465 |
Trench gate trench field plate semi-vertical semi-lateral MOSFET |
Marie Denison, Sameer Pendharkar |
2016-01-19 |
$12,158,000 |
| 9224854 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Sameer Pendharkar |
2015-12-29 |
$12,350,000 |
| 9136368 |
Trench gate trench field plate semi-vertical semi-lateral MOSFET |
Marie Denison, Sameer Pendharkar |
2015-09-15 |
$9,454,000 |
| 9123802 |
Vertical trench MOSFET device in integrated power technologies |
Marie Denison, Sameer Pendharkar |
2015-09-01 |
$8,975,000 |