| 11884381 |
High efficiency low power (HELP) active flow control methodology for simple-hinged flap high-lift systems |
Latunia P. Melton, Mehti Koklu, Marlyn Y. Andino |
2024-01-30 |
|
| 11482613 |
Hybrid active-field gap extended drain MOS transistor |
Sameer Pendharkar |
2022-10-25 |
$66,705,000 |
| 10937905 |
Transistor having double isolation with one floating isolation |
Yongxi Zhang, Philip L. Hower, Sameer Pendharkar, Guru Mathur, Scott Balster +1 more |
2021-03-02 |
$42,720,000 |
| 10358208 |
Hybrid flow control method for simple hinged flap high-lift system |
Mehti Koklu |
2019-07-23 |
|
| 10319809 |
Structures to avoid floating resurf layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, Guru Mathur, Scott Balster, Constantin Bulucea +2 more |
2019-06-11 |
$23,253,000 |
| 10205001 |
Hybrid active-field gap extended drain MOS transistor |
Sameer Pendharkar |
2019-02-12 |
$53,310,000 |
| 9876071 |
Structures to avoid floating RESURF layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, Guru Mathur, Scott Balster, Constantin Bulucea +2 more |
2018-01-23 |
$33,509,000 |
| 9608088 |
Hybrid active-field gap extended drain MOS transistor |
Sameer Pendharkar |
2017-03-28 |
$12,754,000 |
| 9087708 |
IC with floating buried layer ring for isolation of embedded islands |
Philip L. Hower |
2015-07-21 |
$12,880,000 |
| 8878330 |
Integrated high voltage divider |
Hideaki Kawahara, Marie Denison, Sameer Pendharkar, Philip L. Hower, Robert A. Neidorff |
2014-11-04 |
$8,927,000 |
| 8872273 |
Integrated gate controlled high voltage divider |
Hideaki Kawahara, Marie Denison, Sameer Pendharkar, Philip L. Hower, Robert A. Neidorff |
2014-10-28 |
$12,774,000 |
| 8853029 |
Method of making vertical transistor with graded field plate dielectric |
Marie Denison, Sameer Pendharkar, Philip L. Hower |
2014-10-07 |
$8,794,000 |
| 8754469 |
Hybrid active-field gap extended drain MOS transistor |
Sameer Pendharkar |
2014-06-17 |
$6,901,000 |
| 8695925 |
Elastically deformable side-edge link for trailing-edge flap aeroacoustic noise reduction |
Mehdi R. Khorrami, David P. Lockard, James B. Moore, Ji Su, Travis L. Turner +3 more |
2014-04-15 |
|
| 8274131 |
Isolation trench with rounded corners for BiCMOS process |
Sameer Pendharkar, Philip L. Hower, Steven L. Merchant |
2012-09-25 |
$11,577,000 |
| 7910417 |
Distributed high voltage JFET |
Philip L. Hower, David A. Walch, Steven L. Merchant |
2011-03-22 |
$15,102,000 |
| 7846789 |
Isolation trench with rounded corners for BiCMOS process |
Sameer Pendharkar, Philip L. Hower, Steven L. Merchant |
2010-12-07 |
$9,988,000 |
| 7741205 |
Integrated circuit having a top side wafer contact and a method of manufacture therefor |
Tony Phan, William Loftin, Philip L. Hower |
2010-06-22 |
$9,670,000 |
| 7696049 |
Method to manufacture LDMOS transistors with improved threshold voltage control |
Binghua Hu, Howard S. Lee, Henry Litzmann Edwards, Vladimir Bolkhovsky |
2010-04-13 |
$14,416,000 |
| 7605412 |
Distributed high voltage JFET |
Philip L. Hower, David A. Walch, Steven L. Merchant |
2009-10-20 |
$16,340,000 |
| 7417270 |
Distributed high voltage JFET |
Philip L. Hower, David A. Walch, Steven L. Merchant |
2008-08-26 |
$14,684,000 |
| 7345343 |
Integrated circuit having a top side wafer contact and a method of manufacture therefor |
Tony Phan, William Loftin, Philip L. Hower |
2008-03-18 |
$5,664,000 |
| 7262109 |
Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor |
Tony Phan, Philip L. Hower, William Loftin, Martin B. Mollat |
2007-08-28 |
$14,951,000 |
| 7195965 |
Premature breakdown in submicron device geometries |
Philip L. Hower, Taylor R. Efland, Sameer Pendharkar, Vladimir Bolkhovsky |
2007-03-27 |
$8,939,000 |
| 7187034 |
Distributed power MOSFET |
Philip L. Hower, Sameer Pendharkar, Steven L. Merchant |
2007-03-06 |
$19,684,000 |
