Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › IC with floating buried layer ring for isolation of embedded islands

IC with floating buried layer ring for isolation of embedded islands

US Patent 9087708 · Granted Jul 21, 2015

Estimated economic value: $12,880,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High efficiency low power (HELP) active flow control methodology for simple-hing2024
Hybrid active-field gap extended drain MOS transistor2022
Lateral MOSFET with buried drain extension layer2021
Transistor having double isolation with one floating isolation2021
Transistor having double isolation with one floating isolation2021
Integrated high-side driver for P-N bimodal power device2020
Lateral MOSFET with buried drain extension layer2020
Vertical thermoelectric structures2019
Hybrid flow control method for simple hinged flap high-lift system2019
Structures to avoid floating resurf layer in high voltage lateral devices2019
Structures to avoid floating resurf layer in high voltage lateral devices2019
Hybrid active-field gap extended drain MOS transistor2019