Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structures to avoid floating resurf layer in high voltage lateral devices

Structures to avoid floating resurf layer in high voltage lateral devices

US Patent 10319809 · Granted Jun 11, 2019

Estimated economic value: $23,253,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hierarchical energy management for community microgrids with integration of seco2025
Trench gate power MOSFET and manufacturing method therefor2025
Electrostatic discharge guard ring with snapback protection2025
Contaminant collection on SOI2025
Segmented Schottky diode2025
Gallium nitride transistor with a doped region2024
System and method for bi-directional trench power switches2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Trench gate trench field plate vertical MOSFET2024
Trench gate trench field plate vertical MOSFET2024
Superlattice photo detector2024