Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual deep trenches for high voltage isolation

Dual deep trenches for high voltage isolation

US Patent 9786665 · Granted Oct 10, 2017

Estimated economic value: $21,850,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Breakdown diodes and methods of making the same2025
LOCOS fillet for drain reduced breakdown in high voltage transistors2025
Portable power supply2025
Vertical deep trench and deep trench island based deep n-type well diode and dio2025
Vertical deep trench and deep trench island based deep n-type well diode and dio2025
Electrostatic discharge guard ring with snapback protection2025
Rugged LDMOS with field plate2025
Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated 2025
Deep trench intersections2025
False collectors and guard rings for semiconductor devices2025
Semiconductor doped region with biased isolated members2025
Isolation structure for IC with epi regions sharing the same tank2025