Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336299 | Electrostatic discharge guard ring with snapback protection | David LaFonteese, Seetharaman Sridhar, Sameer Pendharkar | 2025-06-17 |
| 12094970 | Electrostatic discharge guard ring with complementary drain extended devices | Seetharaman Sridhar, Sameer Pendharkar, David LaFonteese | 2024-09-17 |
| 11791198 | Trench shield isolation layer | Hong-Seon Yang, Seetharaman Sridhar, Ya-Ping Chen, Fei Ma, Yunlong Liu | 2023-10-17 |
| 11764208 | Electrostatic discharge guard ring with snapback protection | David LaFonteese, Seetharaman Sridhar, Sameer Pendharkar | 2023-09-19 |
| 11658241 | Vertical trench gate MOSFET with integrated Schottky diode | Seetharaman Sridhar, Hong-Seon Yang, Ya-Ping Chen, Thomas E. Grebs | 2023-05-23 |
| 11456381 | Drain-extended transistor | Meng-Chia Lee, Seetharaman Sridhar, Sameer Pendharkar | 2022-09-27 |
| 11322594 | Semiconductor device including a lateral insulator | Fei Ma, Ya-Ping Chen, Yunlong Liu, Hong-Seon Yang, Shengpin Yang +4 more | 2022-05-03 |
| 11322610 | High voltage lateral junction diode device | Seetharaman Sridhar, Sameer Pendharkar | 2022-05-03 |
| 11302568 | Trench shield isolation layer | Hong-Seon Yang, Seetharaman Sridhar, Ya-Ping Chen, Fei Ma, Yunlong Liu | 2022-04-12 |
| 11239318 | High-voltage drain expended MOS transistor | Seetharaman Sridhar, Sameer Pendharkar | 2022-02-01 |
| 11127852 | Vertical trench gate MOSFET with deep well region for junction termination | Seetharaman Sridhar, Hong-Seon Yang, Ya-Ping Chen, Yunlong Liu, Fei Ma | 2021-09-21 |
| 10950720 | Electrostatic discharge guard ring with complementary drain extended devices | Seetharaman Sridhar, Sameer Pendharkar, David LaFonteese | 2021-03-16 |
| 10936000 | Multi-mode high voltage circuit | Michael Ryan Hanschke, Filippo Marino, Tobin Hagan, Richard Lee Valley, Bharath Balaji Kannan +2 more | 2021-03-02 |
| 10896904 | ESD guard ring with snapback protection and lateral buried layers | David LaFonteese, Seetharaman Sridhar, Sameer Pendharkar | 2021-01-19 |
| 10840241 | Resistor divider with improved resistor matching | Richard Lee Valley, Tobin Hagan, Michael Ryan Hanschke, Seetharaman Sridhar | 2020-11-17 |
| 10651274 | High-voltage drain extended MOS transistor | Seetharaman Sridhar, Sameer Pendharkar | 2020-05-12 |
| 10559681 | High voltage lateral junction diode device | Seetharaman Sridhar, Sameer Pendharkar | 2020-02-11 |
| 10504885 | Electrostatic discharge guard ring with snapback protection | David LaFonteese, Seetharaman Sridhar, Sameer Pendharkar | 2019-12-10 |
| 10347621 | Electrostatic discharge guard ring with snapback protection | David LaFonteese, Seetharaman Sridhar, Sameer Pendharkar | 2019-07-09 |
| 9263438 | Apparatus related to a diode device including a JFET portion | Jongjib Kim | 2016-02-16 |
| 9117845 | Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process | Christopher Nassar, Steven Leibiger, James Hall | 2015-08-25 |
| 8987107 | Production of high-performance passive devices using existing operations of a semiconductor process | Daniel Hahn, Steven Leibiger, Christopher Nassar, James Hall | 2015-03-24 |
| 8878275 | LDMOS device with double-sloped field plate | Mark A. Schmidt, Christopher Nassar, Steven Leibiger | 2014-11-04 |
| 8822296 | Use of plate oxide layers to increase bulk oxide thickness in semiconductor devices | Steven Leibiger, Christopher Nassar | 2014-09-02 |
| 8736013 | Schottky diode with opposite-polarity schottky diode field guard ring | Chris Nassar, Dan Hahn, Jongjib Kim | 2014-05-27 |