| 10991796 |
Source/drain contact depth control |
Lin Hu, Veeraraghavan S. Basker, Brian J. Greene, Kai Zhao, Daniel Jaeger +1 more |
2021-04-27 |
| 10522639 |
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device |
Hui Zang, Daniel Jaeger, Haigou Huang, Veeraraghavan S. Basker, Jinsheng Gao +1 more |
2019-12-31 |
| 10418455 |
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device |
Hui Zang, Daniel Jaeger, Haigou Huang, Veeraraghavan S. Basker, Jinsheng Gao +1 more |
2019-09-17 |
| 10269932 |
Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices |
Ankur Arya, Brian J. Greene, Qun Gao, Junsic Hong, Vishal Chhabra |
2019-04-23 |
| 9117845 |
Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process |
Sunglyong Kim, Steven Leibiger, James Hall |
2015-08-25 |
| 9112346 |
Input power protection |
William Robert Newberry, Adrian Mikolajczak, Jaime Bravo |
2015-08-18 |
| 8987107 |
Production of high-performance passive devices using existing operations of a semiconductor process |
Daniel Hahn, Steven Leibiger, Sunglyong Kim, James Hall |
2015-03-24 |
| 8878275 |
LDMOS device with double-sloped field plate |
Sunglyong Kim, Mark A. Schmidt, Steven Leibiger |
2014-11-04 |
| 8822296 |
Use of plate oxide layers to increase bulk oxide thickness in semiconductor devices |
Sunglyong Kim, Steven Leibiger |
2014-09-02 |
