Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gallium nitride transistor with a doped region

Gallium nitride transistor with a doped region

US Patent 10964803 · Granted Mar 30, 2021

Estimated economic value: $42,681,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gallium nitride device having a combination of surface passivation layers2025
Electrostatic discharge guard ring with snapback protection2025
Group III-V IC with different sheet resistance 2-DEG resistors2025
Gallium nitride transistor with a doped region2024
Gallium nitride transistor with a doped region2024
Gallium nitride transistor with a doped region2024
Gallium nitride transistor with a doped region2024
Electronic device with gallium nitride transistors and method of making same2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe ca2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024