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Home › Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate

Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate

US Patent 7897994 · Granted Mar 1, 2011

Estimated economic value: $7,861,000 ⓘ

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