Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Layer transfer of silicon onto III-nitride material for heterogenous integration

Layer transfer of silicon onto III-nitride material for heterogenous integration

US Patent 9396948 · Granted Jul 19, 2016

Estimated economic value: $10,444,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge guard ring with snapback protection2025
Gallium nitride transistor with a doped region2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe ca2024
Electrostatic discharge guard ring with complementary drain extended devices2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks2024
Trench gate trench field plate vertical MOSFET2024
Superlattice photo detector2024
Folding camping apparatus2023
Gallium nitride transistor with a doped region2023
Electrostatic discharge guard ring with snapback protection2023
Laterally diffused metal oxide semiconductor with gate poly contact within sourc2023