SC

Shihsheng Chang

TL Tokyo Electron Limited: 11 patents #663 of 5,567Top 15%
📍 Albany, NY: #145 of 790 inventorsTop 20%
🗺 New York: #13,384 of 115,490 inventorsTop 15%
Overall (All Time): #433,227 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
12341009 Variable hardness amorphous carbon mask Andrew Metz, Yun Han, Ya-Ming Chen, Kai-Hung Yu, Eric Chih-Fang Liu 2025-06-24
12266534 Forming a semiconductor device using a protective layer Andrew Metz 2025-04-01
12237216 Method for filling recessed features in semiconductor devices with a low-resistivity metal Kai-Hung Yu, Ying Trickett, Eric Chih-Fang Liu, Yun Han, Henan Zhang +5 more 2025-02-25
12040176 Technologies for high aspect ratio carbon etching with inserted charge dissipation layer Andrew Metz, Yun Han, Minjoon Park, Ya-Ming Chen 2024-07-16
12009211 Method for highly anisotropic etching of titanium oxide spacer using selective top-deposition Ya-Ming Chen, Katie Lutker-Lee, Eric Chih-Fang Liu, Angelique Raley, Stephanie Oyola-Reynoso 2024-06-11
11756790 Method for patterning a dielectric layer Yen-Tien Lu, Xinghua Sun, Eric Chih-Fang Liu, Angelique Raley, Katie Lutker-Lee 2023-09-12
11651967 Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch David L. O'Meara, Andrew Metz, Yun Han 2023-05-16
11538692 Cyclic plasma etching of carbon-containing materials Yunho Kim, Du Zhang, Mingmei Wang, Andrew Metz 2022-12-27
11227774 Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivity Andrew Metz 2022-01-18
11195723 Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch David L. O'Meara, Andrew Metz, Yun Han 2021-12-07
10937659 Method of anisotropically etching adjacent lines with multi-color selectivity Andrew Metz 2021-03-02