Issued Patents All Time
Showing 25 most recent of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10439040 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | Hiroaki Niimi | 2019-10-08 |
| 10068983 | High-K metal gate | Hiroaki Niimi | 2018-09-04 |
| 9721796 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | Hiroaki Niimi | 2017-08-01 |
| 9431509 | High-K metal gate | Hiroaki Niimi | 2016-08-30 |
| 9397009 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | Hiroaki Niimi | 2016-07-19 |
| 9202884 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | Hiroaki Niimi | 2015-12-01 |
| 9087918 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | Hiroaki Niimi | 2015-07-21 |
| 8828825 | Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors | Hiroaki Niimi | 2014-09-09 |
| 8748996 | Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations | Hiroaki Niimi, Brian K. Kirkpatrick | 2014-06-10 |
| 8748992 | MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls | Brian K. Kirkpatrick | 2014-06-10 |
| 8658489 | Method for dual work function metal gate CMOS with selective capping | Hiroaki Niimi | 2014-02-25 |
| 8643113 | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer | Hiroaki Niimi | 2014-02-04 |
| 8575014 | Semiconductor device fabricated using a metal microstructure control process | Luigi Colombo, Mark Visokay | 2013-11-05 |
| 8536654 | Structure and method for dual work function metal gate CMOS with selective capping | Hiroaki Niimi | 2013-09-17 |
| 8450221 | Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls | Brian K. Kirkpatrick | 2013-05-28 |
| 8441078 | Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations | Hiroaki Niimi, Brian K. Kirkpatrick | 2013-05-14 |
| 8389391 | Triple-gate transistor with reverse shallow trench isolation | Mark Visokay | 2013-03-05 |
| 8198184 | Method to maximize nitrogen concentration at the top surface of gate dielectrics | Hiroaki Niimi, Luigi Colombo | 2012-06-12 |
| 8124529 | Semiconductor device fabricated using a metal microstructure control process | Luigi Colombo, Mark Visokay | 2012-02-28 |
| 8062966 | Method for integration of replacement gate in CMOS flow | Freido Mehrad, Shaofeng Yu | 2011-11-22 |
| 7968443 | Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectrics | Brian K. Kirkpatrick | 2011-06-28 |
| 7960802 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | Hiroaki Niimi | 2011-06-14 |
| 7842567 | Dual work function CMOS devices utilizing carbide based electrodes | Luigi Colombo, Mark Visokay | 2010-11-30 |
| 7799668 | Formation of uniform silicate gate dielectrics | Hiroaki Niimi, Luigi Colombo | 2010-09-21 |
| 7723173 | Low temperature polysilicon oxide process for high-K dielectric/metal gate stack | Ajith Varghese | 2010-05-25 |