Issued Patents All Time
Showing 25 most recent of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11710764 | IC with 3D metal-insulator-metal capacitor | Poornika Fernandes, Sagnik Dey, Luigi Colombo, Haowen Bu, Scott R. Summerfelt +1 more | 2023-07-25 |
| 11004929 | Trimmable silicon-based thermistor with reduced stress dependence | Dok Won Lee, Erika Lynn Mazotti, William French, Ricky Alan Jackson, Wai Lee | 2021-05-11 |
| 10249621 | Dummy contacts to mitigate plasma charging damage to gate dielectrics | Tae Seung Kim, Mahalingam Nandakumar, Eric D. Rullan, Gregory B. Shinn | 2019-04-02 |
| 8962350 | Multi-step deposition of ferroelectric dielectric material | Bhaskar Srinivasan, Brian E. Goodlin, Haowen Bu | 2015-02-24 |
| 8822236 | Hydrogen-blocking film for ferroelectric capacitors | Bo-Yang Lin, Yen Lee, Haowen Bu | 2014-09-02 |
| 8575014 | Semiconductor device fabricated using a metal microstructure control process | Luigi Colombo, James Joseph Chambers | 2013-11-05 |
| 8410559 | Selectively self-assembling oxygen diffusion barrier | Zhengwen Li, Antonio Rotondaro | 2013-04-02 |
| 8389391 | Triple-gate transistor with reverse shallow trench isolation | James Joseph Chambers | 2013-03-05 |
| 8377790 | Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate | Narasimhulu Kanike, Oh-Jung Kwon | 2013-02-19 |
| 8273645 | Method to attain low defectivity fully silicided gates | Freidoon Mehrad, Richard L. Guldi, Yaw S. Obeng | 2012-09-25 |
| 8183137 | Use of dopants to provide low defect gate full silicidation | Jorge A. Kittl | 2012-05-22 |
| 8124529 | Semiconductor device fabricated using a metal microstructure control process | Luigi Colombo, James Joseph Chambers | 2012-02-28 |
| 8021990 | Gate structure and method | Antonio Rotondaro, Luigi Colombo, Rajesh Khamankar, Douglas E. Mercer | 2011-09-20 |
| 7863192 | Methods for full gate silicidation of metal gate structures | Aaron Frank, David Gonzalez, Clint Montgomery | 2011-01-04 |
| 7842567 | Dual work function CMOS devices utilizing carbide based electrodes | James Joseph Chambers, Luigi Colombo | 2010-11-30 |
| 7812401 | MOS device and process having low resistance silicide interface using additional source/drain implant | Borna J. Obradovic, Shashank S. Ekbote | 2010-10-12 |
| 7767511 | Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile | — | 2010-08-03 |
| 7709349 | Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer | — | 2010-05-04 |
| 7682892 | MOS device and process having low resistance silicide interface using additional source/drain implant | Borna J. Obradovic, Shashank S. Ekbote | 2010-03-23 |
| 7678675 | Structure and method for a triple-gate transistor with reverse STI | James Joseph Chambers | 2010-03-16 |
| 7642146 | Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials | James Joseph Chambers, Luigi Colombo | 2010-01-05 |
| 7629212 | Doped WGe to form dual metal gates | Manfred Ramin, Michael F. Pas | 2009-12-08 |
| 7612422 | Structure for dual work function metal gate electrodes by control of interface dipoles | James Joseph Chambers, Luigi Colombo | 2009-11-03 |
| 7601578 | Defect control in gate dielectrics | Luigi Colombo, James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2009-10-13 |
| 7601577 | Work function control of metals | James Joseph Chambers, Luigi Colombo, Antonio Luis Pacheco Rotondaro | 2009-10-13 |