| 11710764 |
IC with 3D metal-insulator-metal capacitor |
Poornika Fernandes, Sagnik Dey, Luigi Colombo, Haowen Bu, Scott R. Summerfelt +1 more |
2023-07-25 |
$54,322,000 |
| 11004929 |
Trimmable silicon-based thermistor with reduced stress dependence |
Dok Won Lee, Erika Lynn Mazotti, William French, Ricky Alan Jackson, Wai Lee |
2021-05-11 |
$37,394,000 |
| 10249621 |
Dummy contacts to mitigate plasma charging damage to gate dielectrics |
Tae Seung Kim, Mahalingam Nandakumar, Eric D. Rullan, Gregory B. Shinn |
2019-04-02 |
$30,568,000 |
| 8962350 |
Multi-step deposition of ferroelectric dielectric material |
Bhaskar Srinivasan, Brian E. Goodlin, Haowen Bu |
2015-02-24 |
$10,276,000 |
| 8822236 |
Hydrogen-blocking film for ferroelectric capacitors |
Bo-Yang Lin, Yen Lee, Haowen Bu |
2014-09-02 |
$9,131,000 |
| 8575014 |
Semiconductor device fabricated using a metal microstructure control process |
Luigi Colombo, James Joseph Chambers |
2013-11-05 |
$9,557,000 |
| 8410559 |
Selectively self-assembling oxygen diffusion barrier |
Zhengwen Li, Antonio Rotondaro |
2013-04-02 |
$8,535,000 |
| 8389391 |
Triple-gate transistor with reverse shallow trench isolation |
James Joseph Chambers |
2013-03-05 |
$5,832,000 |
| 8377790 |
Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate |
Narasimhulu Kanike, Oh-Jung Kwon |
2013-02-19 |
$3,959,000 |
| 8273645 |
Method to attain low defectivity fully silicided gates |
Freidoon Mehrad, Richard L. Guldi, Yaw S. Obeng |
2012-09-25 |
$11,577,000 |
| 8183137 |
Use of dopants to provide low defect gate full silicidation |
Jorge A. Kittl |
2012-05-22 |
$10,888,000 |
| 8124529 |
Semiconductor device fabricated using a metal microstructure control process |
Luigi Colombo, James Joseph Chambers |
2012-02-28 |
$5,868,000 |
| 8021990 |
Gate structure and method |
Antonio Rotondaro, Luigi Colombo, Rajesh Khamankar, Douglas E. Mercer |
2011-09-20 |
$13,160,000 |
| 7863192 |
Methods for full gate silicidation of metal gate structures |
Aaron Frank, David Gonzalez, Clint Montgomery |
2011-01-04 |
$10,945,000 |
| 7842567 |
Dual work function CMOS devices utilizing carbide based electrodes |
James Joseph Chambers, Luigi Colombo |
2010-11-30 |
$12,962,000 |
| 7812401 |
MOS device and process having low resistance silicide interface using additional source/drain implant |
Borna J. Obradovic, Shashank S. Ekbote |
2010-10-12 |
$8,088,000 |
| 7767511 |
Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile |
— |
2010-08-03 |
$11,414,000 |
| 7709349 |
Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer |
— |
2010-05-04 |
$9,820,000 |
| 7682892 |
MOS device and process having low resistance silicide interface using additional source/drain implant |
Borna J. Obradovic, Shashank S. Ekbote |
2010-03-23 |
$12,131,000 |
| 7678675 |
Structure and method for a triple-gate transistor with reverse STI |
James Joseph Chambers |
2010-03-16 |
$9,209,000 |
| 7642146 |
Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials |
James Joseph Chambers, Luigi Colombo |
2010-01-05 |
$10,620,000 |
| 7629212 |
Doped WGe to form dual metal gates |
Manfred Ramin, Michael F. Pas |
2009-12-08 |
$14,110,000 |
| 7612422 |
Structure for dual work function metal gate electrodes by control of interface dipoles |
James Joseph Chambers, Luigi Colombo |
2009-11-03 |
$14,818,000 |
| 7601578 |
Defect control in gate dielectrics |
Luigi Colombo, James Joseph Chambers, Antonio Luis Pacheco Rotondaro |
2009-10-13 |
$14,464,000 |
| 7601577 |
Work function control of metals |
James Joseph Chambers, Luigi Colombo, Antonio Luis Pacheco Rotondaro |
2009-10-13 |
$14,464,000 |
