Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile

Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile

US Patent 7767511 · Granted Aug 3, 2010

Estimated economic value: $11,414,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC with 3D metal-insulator-metal capacitor2023
Trimmable silicon-based thermistor with reduced stress dependence2021
Dummy contacts to mitigate plasma charging damage to gate dielectrics2019
Multi-step deposition of ferroelectric dielectric material2015
Hydrogen-blocking film for ferroelectric capacitors2014
Semiconductor device fabricated using a metal microstructure control process2013
Selectively self-assembling oxygen diffusion barrier2013
Triple-gate transistor with reverse shallow trench isolation2013
Method of fabricating an embedded polysilicon resistor and an embedded eFuse iso2013
Method to attain low defectivity fully silicided gates2012
Use of dopants to provide low defect gate full silicidation2012
Semiconductor device fabricated using a metal microstructure control process2012