Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Triple-gate transistor with reverse shallow trench isolation

Triple-gate transistor with reverse shallow trench isolation

US Patent 8389391 · Granted Mar 5, 2013

Estimated economic value: $5,832,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC with 3D metal-insulator-metal capacitor2023
Trimmable silicon-based thermistor with reduced stress dependence2021
Methods to enhance effective work function of mid-gap metal by incorporating oxy2019
Dummy contacts to mitigate plasma charging damage to gate dielectrics2019
High-K metal gate2018
Methods to enhance effective work function of mid-gap metal by incorporating oxy2017
High-K metal gate2016
Structure and method for metal gate stack oxygen concentration control using an 2016
Methods to enhance effective work function of mid-gap metal by incorporating oxy2015
Structure and method for metal gate stack oxygen concentration control using an 2015
Multi-step deposition of ferroelectric dielectric material2015
Method of substantially reducing the formation of SiGe abnormal growths on polyc2014