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Home › Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors

Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors

US Patent 8828825 · Granted Sep 9, 2014

Estimated economic value: $5,271,000 ⓘ

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