Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8802519 | Work function adjustment with the implant of lanthanides | Michael F. Pas, Husam N. Alshareef | 2014-08-12 |
| 8748246 | Integration scheme for dual work function metal gates | Michael F. Pas | 2014-06-10 |
| 8409943 | Work function adjustment with the implant of lanthanides | Michael F. Pas, Husam N. Alshareef | 2013-04-02 |
| 8304333 | Method of forming a high-k gate dielectric layer | Michael F. Pas, Husam N. Alshareef | 2012-11-06 |
| 8304342 | Sacrificial CMP etch stop layer | Michael F. Pas | 2012-11-06 |
| 8043947 | Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate | Angelo Pinto, Weize Xiong | 2011-10-25 |
| 7858459 | Work function adjustment with the implant of lanthanides | Michael F. Pas, Husam N. Alshareef | 2010-12-28 |
| 7807522 | Lanthanide series metal implant to control work function of metal gate electrodes | Husam N. Alshareef, Michael F. Pas | 2010-10-05 |
| 7799669 | Method of forming a high-k gate dielectric layer | Michael F. Pas, Husam N. Alshareef | 2010-09-21 |
| 7737015 | Formation of fully silicided gate with oxide barrier on the source/drain silicide regions | Puneet Kohli, Craig Huffman | 2010-06-15 |
| 7629212 | Doped WGe to form dual metal gates | Mark Visokay, Michael F. Pas | 2009-12-08 |
| 7560379 | Semiconductive device fabricated using a raised layer to silicide the gate | Puneet Kohli | 2009-07-14 |