| 8802519 |
Work function adjustment with the implant of lanthanides |
Michael F. Pas, Husam N. Alshareef |
2014-08-12 |
| 8748246 |
Integration scheme for dual work function metal gates |
Michael F. Pas |
2014-06-10 |
| 8409943 |
Work function adjustment with the implant of lanthanides |
Michael F. Pas, Husam N. Alshareef |
2013-04-02 |
| 8304333 |
Method of forming a high-k gate dielectric layer |
Michael F. Pas, Husam N. Alshareef |
2012-11-06 |
| 8304342 |
Sacrificial CMP etch stop layer |
Michael F. Pas |
2012-11-06 |
| 8043947 |
Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate |
Angelo Pinto, Weize Xiong |
2011-10-25 |
| 7858459 |
Work function adjustment with the implant of lanthanides |
Michael F. Pas, Husam N. Alshareef |
2010-12-28 |
| 7807522 |
Lanthanide series metal implant to control work function of metal gate electrodes |
Husam N. Alshareef, Michael F. Pas |
2010-10-05 |
| 7799669 |
Method of forming a high-k gate dielectric layer |
Michael F. Pas, Husam N. Alshareef |
2010-09-21 |
| 7737015 |
Formation of fully silicided gate with oxide barrier on the source/drain silicide regions |
Puneet Kohli, Craig Huffman |
2010-06-15 |
| 7629212 |
Doped WGe to form dual metal gates |
Mark Visokay, Michael F. Pas |
2009-12-08 |
| 7560379 |
Semiconductive device fabricated using a raised layer to silicide the gate |
Puneet Kohli |
2009-07-14 |