Issued Patents All Time
Showing 26–50 of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7547596 | Method of enhancing drive current in a transistor | Shaofeng Yu | 2009-06-16 |
| 7535066 | Gate structure and method | Antonio Rotondaro, Luigi Colombo, Rajesh Khamankar, Douglas E. Mercer | 2009-05-19 |
| 7531400 | Methods for fabricating MOS transistor gates with doped silicide | Luigi Colombo | 2009-05-12 |
| 7528024 | Dual work function metal gate integration in semiconductor devices | Luigi Colombo, James Joseph Chambers | 2009-05-05 |
| 7470577 | Dual work function CMOS devices utilizing carbide based electrodes | James Joseph Chambers, Luigi Colombo | 2008-12-30 |
| 7432566 | Method and system for forming dual work function gate electrodes in a semiconductor device | Antonio Luis Pacheco Rotondaro | 2008-10-07 |
| 7387956 | Refractory metal-based electrodes for work function setting in semiconductor devices | Luigi Colombo, James Joseph Chambers | 2008-06-17 |
| 7361599 | Integrated circuit and method | Theodore S. Moise, Guoqiang Xing, Justin Gaynor, Stephen Roy Gilbert, Francis G. Celii +2 more | 2008-04-22 |
| 7351632 | Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon | Luigi Colombo, James Joseph Chambers | 2008-04-01 |
| 7351626 | Method for controlling defects in gate dielectrics | Luigi Colombo, James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2008-04-01 |
| 7338865 | Method for manufacturing dual work function gate electrodes through local thickness-limited silicidation | Robert William Murto, Luigi Colombo | 2008-03-04 |
| 7321154 | Refractory metal-based electrodes for work function setting in semiconductor devices | Luigi Colombo, James Joseph Chambers | 2008-01-22 |
| 7291890 | Gate dielectric and method | Antonio Rotondaro, Luigi Colombo | 2007-11-06 |
| 7291527 | Work function control of metals | James Joseph Chambers, Luigi Colombo, Antonio Luis Pacheco Rotondaro | 2007-11-06 |
| 7276408 | Reduction of dopant loss in a gate structure | Yuanning Chen | 2007-10-02 |
| 7253076 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Cem Basceri +1 more | 2007-08-07 |
| 7253049 | Method for fabricating dual work function metal gates | Jiong-Ping Lu, Shaofeng Yu, Haowen Bu, Lindsey Hall | 2007-08-07 |
| 7253102 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Cem Basceri, Thomas M. Graettinger, Steven D. Cummings | 2007-08-07 |
| 7233035 | Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound | Antonio Luis Pacheco Rotondaro, Luigi Colombo | 2007-06-19 |
| 7229873 | Process for manufacturing dual work function metal gates in a microelectronics device | Luigi Colombo, James Joseph Chambers | 2007-06-12 |
| 7226830 | Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation | Luigi Colombo, James Joseph Chambers | 2007-06-05 |
| 7226826 | Semiconductor device having multiple work functions and method of manufacture therefor | Husam N. Alshareef, Antonio Luis Pacheco Rotondaro, Luigi Colombo | 2007-06-05 |
| 7183221 | Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer | Luigi Colombo | 2007-02-27 |
| 7176076 | Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials | James Joseph Chambers, Luigi Colombo | 2007-02-13 |
| 7163880 | Gate stack and gate stack etch sequence for metal gate integration | — | 2007-01-16 |