Issued Patents All Time
Showing 76–100 of 111 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835639 | Multiple work function gates | Antonio Luis Pacheco Rotondaro | 2004-12-28 |
| 6833576 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Cem Basceri +1 more | 2004-12-21 |
| 6828200 | Multistage deposition that incorporates nitrogen via an intermediate step | James Joseph Chambers, Luigi Colombo | 2004-12-07 |
| 6821873 | Anneal sequence for high-&kgr; film property optimization | Luigi Colombo, Antonio Luis Pacheco Rotondaro | 2004-11-23 |
| 6812112 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Cem Basceri, Thomas M. Graettinger, Steven D. Cummings | 2004-11-02 |
| 6809370 | High-k gate dielectric with uniform nitrogen profile and methods for making the same | Luigi Colombo, Manuel Quevedo-Lopez, James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2004-10-26 |
| 6809394 | Dual metal-alloy nitride gate electrodes | — | 2004-10-26 |
| 6797599 | Gate structure and method | Antonio Rotondaro, Luigi Colombo | 2004-09-28 |
| 6794252 | Method and system for forming dual work function gate electrodes in a semiconductor device | Antonio Luis Pacheco Rotondaro | 2004-09-21 |
| 6783997 | Gate structure and method | Antonio Rotondaro, Luigi Colombo | 2004-08-31 |
| 6781175 | Rhodium-rich integrated circuit capacitor electrode | Haining Yang, Dan Gealy, Gurtej S. Sandhu, Howard E. Rhodes | 2004-08-24 |
| 6770521 | Method of making multiple work function gates by implanting metals with metallic alloying additives | Antonio Luis Pacheco Rotondaro, Luigi Colombo | 2004-08-03 |
| 6767806 | METHOD OF FORMING A PATTERNED SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL, AND METHOD OF FORMING A CAPACITOR HAVING A CAPACITOR DIELECTRIC REGION COMPRISING SUBSTANTIALLY CRYSTALLINE TA2O5 COMPRISING MATERIAL | Cem Basceri, Garo Derderian, John M. Drynan, Gurtej S. Sandhu | 2004-07-27 |
| 6764943 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers | Cem Basceri, Thomas M. Graettinger, Steven D. Cummings | 2004-07-20 |
| 6750126 | Methods for sputter deposition of high-k dielectric films | James Joseph Chambers, Luigi Colombo, Antonio Luis Pacheco Rotondaro | 2004-06-15 |
| 6740554 | Methods to form rhodium-rich oxygen barriers | Haining Yang, Dan Gealy, Gurtej S. Sandhu, Howard E. Rhodes | 2004-05-25 |
| 6696332 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | Antonio Luis Pacheco Rotondaro, Luigi Colombo | 2004-02-24 |
| 6642094 | Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide | Antonio Luis Pacheco Rotondaro | 2003-11-04 |
| 6617250 | Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line | Cem Basceri, Garo Derderian, John M. Drynan, Gurtej S. Sandhu | 2003-09-09 |
| 6600183 | Integrated circuit capacitor and memory | Luigi Colombo, Rajesh Khamankar, Mark A. Kressley | 2003-07-29 |
| 6596583 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Cem Basceri +1 more | 2003-07-22 |
| 6544906 | Annealing of high-k dielectric materials | Antonio Luis Pacheco Rotondaro, Luigi Colombo | 2003-04-08 |
| 6518610 | Rhodium-rich oxygen barriers | Haining Yang, Dan Gealy, Gurtej S. Sandhu, Howard E. Rhodes | 2003-02-11 |
| 6511896 | Method of etching a substantially amorphous TA2O5 comprising layer | Cem Basceri, Garo Derderian, John M. Drynan, Gurtej S. Sandhu | 2003-01-28 |
| 6492241 | Integrated capacitors fabricated with conductive metal oxides | Howard E. Rhodes, Tom Graettinger, Dan Gealy, Gurtej S. Sandhu, Cem Basceri +1 more | 2002-12-10 |