| 12396180 |
Pillar and word line plate architecture for a memory array |
Lorenzo Fratin, Enrico Varesi, Paolo Fantini |
2025-08-19 |
|
| 12159919 |
Replacement gate formation in memory |
— |
2024-12-03 |
$71,982,000 |
| 11864475 |
Memory device with laterally formed memory cells |
Lorenzo Fratin, Patrick M. Flynn, Enrico Varesi, Paolo Fantini |
2024-01-02 |
$12,628,000 |
| 11790987 |
Decoding for a memory device |
Lorenzo Fratin, Paolo Fantini, Fabio Pellizzer |
2023-10-17 |
$12,590,000 |
| 11652153 |
Replacement gate formation in memory |
— |
2023-05-16 |
$14,212,000 |
| 11417394 |
Decoding for a memory device |
Lorenzo Fratin, Paolo Fantini, Fabio Pellizzer |
2022-08-16 |
$9,745,000 |
| 11257838 |
Thickened sidewall dielectric for memory cell |
Ronald A. Weimer, Kyu S. Min, Durai Vishak Nirmal Ramaswamy |
2022-02-22 |
$21,549,000 |
| 10608005 |
Thickened sidewall dielectric for memory cell |
Ronald A. Weimer, Kyu S. Min, Durai Vishak Nirmal Ramaswamy |
2020-03-31 |
$9,822,000 |
| 9082714 |
Use of etch process post wordline definition to improve data retention in a flash memory device |
Randy J. Koval, Max Hineman, Ronald A. Weimer, Vinayak Shamanna, William Kueber +2 more |
2015-07-14 |
$20,297,000 |
| 8846542 |
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
Kevin R. Shea |
2014-09-30 |
$13,656,000 |
| 8691704 |
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
Kevin R. Shea |
2014-04-08 |
$8,842,000 |
| 8519463 |
Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures along portions of the tubular capacitor storage nodes |
H. Montgomery Manning |
2013-08-27 |
$4,465,000 |
| 8470716 |
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
Kevin R. Shea |
2013-06-25 |
$5,511,000 |
| 8228743 |
Memory cells containing charge-trapping zones |
Kyu S. Min, Rhett T. Brewer, Tejas Krishnamohan, D. V. Nirmal Ramaswamy, Ronald A. Weimer +1 more |
2012-07-24 |
$3,889,000 |
| 8154064 |
Semiconductor constructions |
H. Montgomery Manning |
2012-04-10 |
$5,468,000 |
| 8076248 |
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
Kevin R. Shea |
2011-12-13 |
$2,397,000 |
| 7989289 |
Floating gate structures |
Tejas Krishnamohan, Krishna K. Parat, Kyu S. Min, Srivardhan Gowda, Nirmal Ramaswamy |
2011-08-02 |
$15,238,000 |
| 7932550 |
Method of forming high aspect ratio structures |
Kevin J. Torek, Kevin R. Shea |
2011-04-26 |
$5,655,000 |
| 7898850 |
Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells |
Kyu S. Min, Rhett T. Brewer, Tejas Krishnamohan, D. V. Nirmal Ramaswamy, Ronald A. Weimer +1 more |
2011-03-01 |
$2,983,000 |
| 7781818 |
Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures along portions of the tubular capacitor storage nodes |
H. Montgomery Manning |
2010-08-24 |
$7,473,000 |
| 7736987 |
Methods of forming semiconductor constructions |
H. Montgomery Manning |
2010-06-15 |
$3,984,000 |
| 7687844 |
Semiconductor constructions |
Cancheepuram V. Srividya, F. Daniel Gealy |
2010-03-30 |
$3,068,000 |
| 7683413 |
Double sided container capacitor for a semiconductor device |
Marsela Pontoh, Thomas A. Figura |
2010-03-23 |
$3,502,000 |
| 7666797 |
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
Kevin R. Shea |
2010-02-23 |
$4,787,000 |
| 7535695 |
DRAM cells and electronic systems |
Cem Basceri |
2009-05-19 |
$4,683,000 |
