| 12268011 |
Pillar select transistor for 3-dimensional cross point memory |
Prashant Majhi, Derchang Kau |
2025-04-01 |
|
| 11195575 |
Memory array with shorting structure on a dummy array thereof, and method of providing same |
Jaydip Bharatkumar Patel, Everardo Torres Flores, Khaled Hasnat |
2021-12-07 |
$28,128,000 |
| 9837604 |
Phase-change memory cell implant for dummy array leakage reduction |
Lequn Liu, Ugo Russo |
2017-12-05 |
$17,379,000 |
| 9608042 |
Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques |
Fabio Pellizzer, Giulio Albini, Stephen W. Russell, Sanjay Rangan |
2017-03-28 |
$8,391,000 |
| 9559146 |
Phase-change memory cell implant for dummy array leakage reduction |
Lequn Liu, Ugo Russo |
2017-01-31 |
$9,360,000 |
| 9299747 |
Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques |
Fabio Pellizzer, Giulio Albini, Stephen W. Russell, Sanjay Rangan |
2016-03-29 |
$14,056,000 |
| 9231202 |
Thermal-disturb mitigation in dual-deck cross-point memories |
Kiran Pangal |
2016-01-05 |
$11,513,000 |
| 9082714 |
Use of etch process post wordline definition to improve data retention in a flash memory device |
Randy J. Koval, Ronald A. Weimer, Vinayak Shamanna, Thomas M. Graettinger, William Kueber +2 more |
2015-07-14 |
$20,297,000 |
| 8809198 |
Nano-crystal etch process |
Ramakanth Alapati, Paul A. Morgan |
2014-08-19 |
$23,693,000 |
| 8673787 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Daniel A. Steckert, Jingyi Bai, Shane J. Trapp, Tony Schrock |
2014-03-18 |
$9,836,000 |
| 8568900 |
Methods for forming an enriched metal oxide surface |
Stephen W. Russell |
2013-10-29 |
$5,369,000 |
| 7985692 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Daniel A. Steckert, Jingyi Bai, Shane J. Trapp, Tony Schrock |
2011-07-26 |
$4,523,000 |
| 7659210 |
Nano-crystal etch process |
Ramakanth Alapati, Paul A. Morgan |
2010-02-09 |
$4,497,000 |
| 7615164 |
Plasma etching methods and contact opening forming methods |
Bradley J. Howard |
2009-11-10 |
$7,986,000 |
| 7396774 |
Methods for forming an enriched metal oxide surface |
Stephen W. Russell |
2008-07-08 |
$1,892,000 |
| 7344975 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Daniel A. Steckert, Jingyi Bai, Shane J. Trapp, Tony Schrock |
2008-03-18 |
$1,356,000 |
| 7319071 |
Methods for forming a metallic damascene structure |
Stephen W. Russell |
2008-01-15 |
$2,581,000 |
| 7293526 |
Plasma reaction chamber liner consisting essentially of osmium |
Li Li |
2007-11-13 |
$2,812,000 |
| 7255803 |
Method of forming contact openings |
Bradley J. Howard |
2007-08-14 |
$2,127,000 |
| 7211849 |
Protective layers for MRAM devices |
Karen Signorini, Brad J. Howard |
2007-05-01 |
$2,441,000 |
| 7166543 |
Methods for forming an enriched metal oxide surface for use in a semiconductor device |
Stephen W. Russell |
2007-01-23 |
$2,294,000 |
| 7135444 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
Donald L. Yates |
2006-11-14 |
$3,511,000 |
| 7131391 |
Plasma reaction chamber liner comprising ruthenium |
Li Li |
2006-11-07 |
$2,394,000 |
| 7118683 |
Methods of etching silicon-oxide-containing compositions |
Li Li |
2006-10-10 |
$1,925,000 |
| 7087561 |
Cleaning composition useful in semiconductor integrated circuit fabrication |
Donald L. Yates |
2006-08-08 |
$2,312,000 |
