| 11672118 |
Electronic devices comprising adjoining oxide materials and related systems |
Shyam Surthi, Richard J. Hill, Gurtej S. Sandhu, Byeung Chul Kim, Francois H. Fabreguette +2 more |
2023-06-06 |
$9,972,000 |
| 10930548 |
Methods of forming an apparatus for making semiconductor dieves |
Timothy A. Quick, Byeung Chul Kim |
2021-02-23 |
$23,020,000 |
| 9984977 |
Semiconductor constructions |
Ashim Dutta, Mohd Kamran Akhtar |
2018-05-29 |
$43,287,000 |
| 9741580 |
Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate |
Vishal Sipani, Anton J. deVilliers, William R. Brown, Ranjan Khurana, Kevin R. Shea |
2017-08-22 |
$10,704,000 |
| 9679852 |
Semiconductor constructions |
Ashim Dutta, Mohd Kamran Akhtar |
2017-06-13 |
$18,241,000 |
| 8999852 |
Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate |
Vishal Sipani, Anton J. deVillers, William R. Brown, Ranjan Khurana, Kevin R. Shea |
2015-04-07 |
$13,485,000 |
| 8889558 |
Methods of forming a pattern on a substrate |
Ranjan Khurana, Anton J. deVillers, Kevin J. Torek, Scott L. Light, James M. Buntin |
2014-11-18 |
$16,182,000 |
| 8889559 |
Methods of forming a pattern on a substrate |
Ranjan Khurana, Kevin R. Shea |
2014-11-18 |
$16,182,000 |
| 8673787 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock |
2014-03-18 |
$9,836,000 |
| 8624300 |
Contact integration for three-dimensional stacking semiconductor devices |
Sanh D. Tang, John K. Zahurak, Krishna K. Parat |
2014-01-07 |
$13,955,000 |
| 7985692 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock |
2011-07-26 |
$4,523,000 |
| 7419913 |
Methods of forming openings into dielectric material |
Thomas M. Graettinger, John K. Zahurak, Thomas A. Figura |
2008-09-02 |
$1,912,000 |
| 7344975 |
Method to reduce charge buildup during high aspect ratio contact etch |
Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock |
2008-03-18 |
$1,356,000 |
| 7291895 |
Integrated circuitry |
Brian F. Lawlor |
2007-11-06 |
$2,950,000 |
| 7202171 |
Method for forming a contact opening in a semiconductor device |
— |
2007-04-10 |
$2,167,000 |
| 7153779 |
Method to eliminate striations and surface roughness caused by dry etch |
— |
2006-12-26 |
$1,821,000 |
| 6897120 |
Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate |
— |
2005-05-24 |
$1,184,000 |
| 6806197 |
Method of forming integrated circuitry, and method of forming a contact opening |
Brian F. Lawlor |
2004-10-19 |
$1,661,000 |
| 6630410 |
Self-aligned PECVD etch mask |
Kevin G. Donohoe |
2003-10-07 |
$3,475,000 |
| 6569774 |
Method to eliminate striations and surface roughness caused by dry etch |
— |
2003-05-27 |
$3,176,000 |
| 6451705 |
Self-aligned PECVD etch mask |
Kevin G. Donohoe |
2002-09-17 |
$3,284,000 |
