Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11672118 | Electronic devices comprising adjoining oxide materials and related systems | Shyam Surthi, Richard J. Hill, Gurtej S. Sandhu, Byeung Chul Kim, Francois H. Fabreguette +2 more | 2023-06-06 |
| 10930548 | Methods of forming an apparatus for making semiconductor dieves | Timothy A. Quick, Byeung Chul Kim | 2021-02-23 |
| 9984977 | Semiconductor constructions | Ashim Dutta, Mohd Kamran Akhtar | 2018-05-29 |
| 9741580 | Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate | Vishal Sipani, Anton J. deVilliers, William R. Brown, Ranjan Khurana, Kevin R. Shea | 2017-08-22 |
| 9679852 | Semiconductor constructions | Ashim Dutta, Mohd Kamran Akhtar | 2017-06-13 |
| 8999852 | Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate | Vishal Sipani, Anton J. deVillers, William R. Brown, Ranjan Khurana, Kevin R. Shea | 2015-04-07 |
| 8889558 | Methods of forming a pattern on a substrate | Ranjan Khurana, Anton J. deVillers, Kevin J. Torek, Scott L. Light, James M. Buntin | 2014-11-18 |
| 8889559 | Methods of forming a pattern on a substrate | Ranjan Khurana, Kevin R. Shea | 2014-11-18 |
| 8673787 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock | 2014-03-18 |
| 8624300 | Contact integration for three-dimensional stacking semiconductor devices | Sanh D. Tang, John K. Zahurak, Krishna K. Parat | 2014-01-07 |
| 7985692 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock | 2011-07-26 |
| 7419913 | Methods of forming openings into dielectric material | Thomas M. Graettinger, John K. Zahurak, Thomas A. Figura | 2008-09-02 |
| 7344975 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Daniel A. Steckert, Jingyi Bai, Tony Schrock | 2008-03-18 |
| 7291895 | Integrated circuitry | Brian F. Lawlor | 2007-11-06 |
| 7202171 | Method for forming a contact opening in a semiconductor device | — | 2007-04-10 |
| 7153779 | Method to eliminate striations and surface roughness caused by dry etch | — | 2006-12-26 |
| 6897120 | Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate | — | 2005-05-24 |
| 6806197 | Method of forming integrated circuitry, and method of forming a contact opening | Brian F. Lawlor | 2004-10-19 |
| 6630410 | Self-aligned PECVD etch mask | Kevin G. Donohoe | 2003-10-07 |
| 6569774 | Method to eliminate striations and surface roughness caused by dry etch | — | 2003-05-27 |
| 6451705 | Self-aligned PECVD etch mask | Kevin G. Donohoe | 2002-09-17 |