Daniel A. Steckert has been granted 6 US patents while listed as an inventor at AMD . The first was granted in 1999 and the most recent in March 2014. Daniel A. Steckert ranks #779,687 of 4,157,543 US inventors in our database (top 18.8%). Patent records list Daniel A. Steckert in San Jose, CA, US.
Patents per Year Patents granted per year, 1999 to 2014 Bar chart with a peak of 2 patents in 1999. peak 2 1999: 2 patents 1999 2000: 1 patents 2000 2008: 1 patents 2008 2011: 1 patents 2011 2014: 1 patents 2014
Issued Patents All Time
Profile Widget
Showing 1–6 of 6 patents
Patent # Title Co-Inventors Date Approx Value ⓘ
8673787 Method to reduce charge buildup during high aspect ratio contact etch Gurtej S. Sandhu , Max Hineman , Jingyi Bai , Shane J. Trapp , Tony Schrock 2014-03-18
$9,836,000
7985692 Method to reduce charge buildup during high aspect ratio contact etch Gurtej S. Sandhu , Max Hineman , Jingyi Bai , Shane J. Trapp , Tony Schrock 2011-07-26
$4,523,000
7344975 Method to reduce charge buildup during high aspect ratio contact etch Gurtej S. Sandhu , Max Hineman , Jingyi Bai , Shane J. Trapp , Tony Schrock 2008-03-18
$1,356,000
6107172 Controlled linewidth reduction during gate pattern formation using an SiON BARC Chih-Yuh Yang , Scott A. Bell 2000-08-22
$6,781,000
5965461 Controlled linewidth reduction during gate pattern formation using a spin-on barc Chih-Yuh Yang , Scott A. Bell 1999-10-12
$2,065,000
5879975 Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile Olov Karlsson , Effiong Ibok , Dong-Hyuk Ju , Scott A. Bell , Robert B. Ogle 1999-03-09
$5,385,000
