Issued Patents All Time
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8673787 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Jingyi Bai, Shane J. Trapp, Tony Schrock | 2014-03-18 |
| 7985692 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Jingyi Bai, Shane J. Trapp, Tony Schrock | 2011-07-26 |
| 7344975 | Method to reduce charge buildup during high aspect ratio contact etch | Gurtej S. Sandhu, Max Hineman, Jingyi Bai, Shane J. Trapp, Tony Schrock | 2008-03-18 |
| 6107172 | Controlled linewidth reduction during gate pattern formation using an SiON BARC | Chih-Yuh Yang, Scott A. Bell | 2000-08-22 |
| 5965461 | Controlled linewidth reduction during gate pattern formation using a spin-on barc | Chih-Yuh Yang, Scott A. Bell | 1999-10-12 |
| 5879975 | Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile | Olov Karlsson, Effiong Ibok, Dong-Hyuk Ju, Scott A. Bell, Robert B. Ogle | 1999-03-09 |