| 8045314 |
Method of atmospheric discharge energy conversion, storage and distribution |
— |
2011-10-25 |
|
| 6800568 |
Methods for the deposition of high-K films and high-K films produced thereby |
— |
2004-10-05 |
$3,728,000 |
| 6762454 |
Stacked polysilicon layer for boron penetration inhibition |
Joong S. Jeon, Arvind Halliyal, Minh Van Ngo |
2004-07-13 |
$4,054,000 |
| 6735123 |
High density dual bit flash memory cell with non planar structure |
Nicholas H. Tripsas, Mark T. Ramsbey, Wei Zheng, Fred Cheung |
2004-05-11 |
$5,065,000 |
| 6693004 |
Interfacial barrier layer in semiconductor devices with high-K gate dielectric material |
Arvind Halliyal, Joong S. Jeon, Minh Van Ngo, William G. En |
2004-02-17 |
$7,080,000 |
| 6630383 |
Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer |
Wei Zheng, Nicholas H. Tripsas, Mark T. Ramsbey, Fred Cheung |
2003-10-07 |
$3,893,000 |
| 6599810 |
Shallow trench isolation formation with ion implantation |
Nick Kepler, Olov Karlsson, Larry Wang, Basab Bandyopadhyay, Christopher F. Lyons |
2003-07-29 |
$3,092,000 |
| 6593637 |
Method for establishing component isolation regions in SOI semiconductor device |
— |
2003-07-15 |
$1,952,000 |
| 6472283 |
MOS transistor processing utilizing UV-nitride removable spacer and HF etch |
Emi Ishida, Srinath Krishman, Ming-Yin Hao |
2002-10-29 |
$1,498,000 |
| 6472233 |
MOSFET test structure for capacitance-voltage measurements |
Khaled Ahmed, Nguyen Duc Bui, John R. Hauser |
2002-10-29 |
$1,498,000 |
| 6451641 |
Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material |
Arvind Halliyal, Robert B. Ogle, Joong S. Jeon, Fred Cheung |
2002-09-17 |
$1,456,000 |
| 6444555 |
Method for establishing ultra-thin gate insulator using anneal in ammonia |
— |
2002-09-03 |
$1,843,000 |
| 6429083 |
Removable spacer technology using ion implantation to augment etch rate differences of spacer materials |
Emi Ishida, Srinath Krishnan, Ming-Yin Hao |
2002-08-06 |
$1,934,000 |
| 6417041 |
Method for fabricating high permitivity dielectric stacks having low buffer oxide |
— |
2002-07-09 |
$2,516,000 |
| 6399519 |
Method for establishing ultra-thin gate insulator having annealed oxide and oxidized nitride |
— |
2002-06-04 |
$2,015,000 |
| 6391784 |
Spacer-assisted ultranarrow shallow trench isolation formation |
— |
2002-05-21 |
$2,063,000 |
| 6380047 |
Shallow trench isolation formation with two source/drain masks and simplified planarization mask |
Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Larry Wang, Christopher F. Lyons |
2002-04-30 |
$1,930,000 |
| 6372582 |
Indium retrograde channel doping for improved gate oxide reliability |
Richard P. Rouse, Ming-Yin Hao, Emi Ishida |
2002-04-16 |
$2,231,000 |
| 6344396 |
Removable spacer technology using ion implantation for forming asymmetric MOS transistors |
Emi Ishida, Srinath Krishman, Ming-Yin Hao |
2002-02-05 |
$5,814,000 |
| 6342423 |
MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch |
Emi Ishida, Srinath Krishnan, Ming-Yin Hao |
2002-01-29 |
$11,164,000 |
| 6329256 |
Self-aligned damascene gate formation with low gate resistance |
— |
2001-12-11 |
$6,262,000 |
| 6319857 |
Method of fabricating stacked N-O-N ultrathin gate dielectric structures |
— |
2001-11-20 |
$3,380,000 |
| 6239031 |
Stepper alignment mark structure for maintaining alignment integrity |
Nick Kepler, Olov Karlsson, Larry Wang, Basab Bandyopadhyah, Christopher F. Lyons |
2001-05-29 |
$6,079,000 |
| 6235456 |
Graded anti-reflective barrier films for ultra-fine lithography |
— |
2001-05-22 |
$9,315,000 |
| 6235607 |
Method for establishing component isolation regions in SOI semiconductor device |
— |
2001-05-22 |
$9,315,000 |
