| 12082403 |
One time programmable bitcell with select device in isolated well |
Andrew E. Horch, Oleg Ivanov |
2024-09-03 |
$143,956,000 |
| 10623192 |
Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security |
— |
2020-04-14 |
$31,679,000 |
| 10163520 |
OTP cell with improved programmability |
Chun-Yun Jian |
2018-12-25 |
|
| 10032522 |
Three-transistor OTP memory cell |
Harry Luan, Tao Su, Charlie Cheng |
2018-07-24 |
$11,507,000 |
| 9224714 |
Semiconductor device having a through-substrate via |
Arkadii V. Samoilov, Tyler Parent |
2015-12-29 |
$13,540,000 |
| 9129710 |
Dynamic trim method for non volatile memory products |
Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont |
2015-09-08 |
$9,779,000 |
| 8748232 |
Semiconductor device having a through-substrate via |
Arkadii V. Samoilov, Tyler Parent |
2014-06-10 |
$21,295,000 |
| 8630137 |
Dynamic trim method for non-volatile memory products |
Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont |
2014-01-14 |
$4,968,000 |
| 6962842 |
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT |
Alexander Kalnitsky, Sang-Hoon Park, Viktor Zekeriya |
2005-11-08 |
$70,271,000 |
| 6599810 |
Shallow trench isolation formation with ion implantation |
Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2003-07-29 |
$3,092,000 |
| 6530997 |
Use of gaseous silicon hydrides as a reducing agent to remove re-sputtered silicon oxide |
Steven C. Avanzino |
2003-03-11 |
$2,325,000 |
| 6383906 |
Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption |
Karsten Wieczorek, Nicholas J. Kepler, Paul R. Besser |
2002-05-07 |
$2,110,000 |
| 6380047 |
Shallow trench isolation formation with two source/drain masks and simplified planarization mask |
Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Effiong Ibok, Christopher F. Lyons |
2002-04-30 |
$1,930,000 |
| 6380040 |
Prevention of dopant out-diffusion during silicidation and junction formation |
Nick Kepler, Karsten Wieczorek, Paul R. Besser |
2002-04-30 |
$1,930,000 |
| 6323516 |
Flash memory device and fabrication method having a high coupling ratio |
Steven K. Park |
2001-11-27 |
$5,286,000 |
| 6265273 |
Method of forming rectangular shaped spacers |
Steven C. Avanzino, Stephen Keetai Park, Bharath Rangarajan, Jeffrey A. Shields, Guarionex Morales |
2001-07-24 |
$3,903,000 |
| 6238986 |
Formation of junctions by diffusion from a doped film at silicidation |
Nick Kepler, Karsten Wieczorek, Paul R. Besser |
2001-05-29 |
$6,079,000 |
| 6239031 |
Stepper alignment mark structure for maintaining alignment integrity |
Nick Kepler, Olov Karlsson, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons |
2001-05-29 |
$6,079,000 |
| 6232635 |
Method to fabricate a high coupling flash cell with less silicide seam problem |
Steven C. Avanzino, Jeffrey A. Shields, Stephen Keetai Park |
2001-05-15 |
$7,906,000 |
| 6171962 |
Shallow trench isolation formation without planarization mask |
Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Effiong Ibok |
2001-01-09 |
$4,016,000 |
| 6169005 |
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation |
Nick Kepler, Karsten Wieczorek, Paul R. Besser |
2001-01-02 |
$6,157,000 |
| 6162699 |
Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery |
Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2000-12-19 |
$3,857,000 |
| 6162689 |
Multi-depth junction formation tailored to silicide formation |
Nick Kepler, Karsten Wieczorek, Paul R. Besser |
2000-12-19 |
$3,857,000 |
| 6150243 |
Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
Karsten Wieczorek, Nick Kepler, Paul R. Besser |
2000-11-21 |
$5,742,000 |
| 6143624 |
Shallow trench isolation formation with spacer-assisted ion implantation |
Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2000-11-07 |
$6,155,000 |