Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
LW

Larry Wang — 42 Patents

AMD: 33 patents #292 of 9,280Top 4%
MPMaxim Integrated Products: 5 patents #157 of 945Top 20%
SYSynopsys: 4 patents #328 of 2,302Top 15%
San Jose, CA: #1,306 of 32,062 inventorsTop 5%
California: #10,667 of 386,348 inventorsTop 3%
Overall (All Time): #72,062 of 4,157,543Top 2%
42 Patents All Time
Larry Wang has been granted 42 US patents while listed as an inventor at AMD. The first was granted in 1996 and the most recent in September 2024. Larry Wang ranks #72,062 of 4,157,543 US inventors in our database (top 1.7%). Patent records list Larry Wang in San Jose, CA, US.

Issued Patents All Time

Showing 1–25 of 42 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12082403 One time programmable bitcell with select device in isolated well Andrew E. Horch, Oleg Ivanov 2024-09-03 $143,956,000
10623192 Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security 2020-04-14 $31,679,000
10163520 OTP cell with improved programmability Chun-Yun Jian 2018-12-25
10032522 Three-transistor OTP memory cell Harry Luan, Tao Su, Charlie Cheng 2018-07-24 $11,507,000
9224714 Semiconductor device having a through-substrate via Arkadii V. Samoilov, Tyler Parent 2015-12-29 $13,540,000
9129710 Dynamic trim method for non volatile memory products Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont 2015-09-08 $9,779,000
8748232 Semiconductor device having a through-substrate via Arkadii V. Samoilov, Tyler Parent 2014-06-10 $21,295,000
8630137 Dynamic trim method for non-volatile memory products Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont 2014-01-14 $4,968,000
6962842 Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Alexander Kalnitsky, Sang-Hoon Park, Viktor Zekeriya 2005-11-08 $70,271,000
6599810 Shallow trench isolation formation with ion implantation Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons 2003-07-29 $3,092,000
6530997 Use of gaseous silicon hydrides as a reducing agent to remove re-sputtered silicon oxide Steven C. Avanzino 2003-03-11 $2,325,000
6383906 Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption Karsten Wieczorek, Nicholas J. Kepler, Paul R. Besser 2002-05-07 $2,110,000
6380047 Shallow trench isolation formation with two source/drain masks and simplified planarization mask Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Effiong Ibok, Christopher F. Lyons 2002-04-30 $1,930,000
6380040 Prevention of dopant out-diffusion during silicidation and junction formation Nick Kepler, Karsten Wieczorek, Paul R. Besser 2002-04-30 $1,930,000
6323516 Flash memory device and fabrication method having a high coupling ratio Steven K. Park 2001-11-27 $5,286,000
6265273 Method of forming rectangular shaped spacers Steven C. Avanzino, Stephen Keetai Park, Bharath Rangarajan, Jeffrey A. Shields, Guarionex Morales 2001-07-24 $3,903,000
6238986 Formation of junctions by diffusion from a doped film at silicidation Nick Kepler, Karsten Wieczorek, Paul R. Besser 2001-05-29 $6,079,000
6239031 Stepper alignment mark structure for maintaining alignment integrity Nick Kepler, Olov Karlsson, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons 2001-05-29 $6,079,000
6232635 Method to fabricate a high coupling flash cell with less silicide seam problem Steven C. Avanzino, Jeffrey A. Shields, Stephen Keetai Park 2001-05-15 $7,906,000
6171962 Shallow trench isolation formation without planarization mask Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Effiong Ibok 2001-01-09 $4,016,000
6169005 Formation of junctions by diffusion from a doped amorphous silicon film during silicidation Nick Kepler, Karsten Wieczorek, Paul R. Besser 2001-01-02 $6,157,000
6162699 Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons 2000-12-19 $3,857,000
6162689 Multi-depth junction formation tailored to silicide formation Nick Kepler, Karsten Wieczorek, Paul R. Besser 2000-12-19 $3,857,000
6150243 Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer Karsten Wieczorek, Nick Kepler, Paul R. Besser 2000-11-21 $5,742,000
6143624 Shallow trench isolation formation with spacer-assisted ion implantation Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons 2000-11-07 $6,155,000