| 6599810 |
Shallow trench isolation formation with ion implantation |
Olov Karlsson, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2003-07-29 |
$3,092,000 |
| 6514844 |
Sidewall treatment for low dielectric constant (low K) materials by ion implantation |
Jeremy I. Martin, Eric M. Apelgren, Christian Zistl, Paul R. Besser, Srikantewara Dakshina-Murthy +2 more |
2003-02-04 |
$1,030,000 |
| 6380040 |
Prevention of dopant out-diffusion during silicidation and junction formation |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2002-04-30 |
$1,930,000 |
| 6380047 |
Shallow trench isolation formation with two source/drain masks and simplified planarization mask |
Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons |
2002-04-30 |
$1,930,000 |
| 6274511 |
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer |
Karsten Wieczorek, Paul R. Besser |
2001-08-14 |
$3,163,000 |
| 6255214 |
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions |
Karsten Wieczorek, Paul R. Besser |
2001-07-03 |
$7,468,000 |
| 6238986 |
Formation of junctions by diffusion from a doped film at silicidation |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2001-05-29 |
$6,079,000 |
| 6239031 |
Stepper alignment mark structure for maintaining alignment integrity |
Olov Karlsson, Larry Wang, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons |
2001-05-29 |
$6,079,000 |
| 6204177 |
Method of forming junction leakage free metal silicide in a semiconductor wafer by alloying refractory metal |
Paul R. Besser, Karsten Wieczorek |
2001-03-20 |
$7,513,000 |
| 6171962 |
Shallow trench isolation formation without planarization mask |
Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Larry Wang, Effiong Ibok |
2001-01-09 |
$4,016,000 |
| 6169005 |
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2001-01-02 |
$6,157,000 |
| 6165903 |
Method of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidation |
Paul R. Besser, Karsten Wieczorek |
2000-12-26 |
$2,711,000 |
| 6162699 |
Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery |
Larry Wang, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2000-12-19 |
$3,857,000 |
| 6162689 |
Multi-depth junction formation tailored to silicide formation |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2000-12-19 |
$3,857,000 |
| 6156615 |
Method for decreasing the contact resistance of silicide contacts by retrograde implantation of source/drain regions |
— |
2000-12-05 |
$3,995,000 |
| 6150243 |
Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2000-11-21 |
$5,742,000 |
| 6143624 |
Shallow trench isolation formation with spacer-assisted ion implantation |
Olov Karlsson, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons |
2000-11-07 |
$6,155,000 |
| 6130467 |
Shallow trench isolation with spacers for improved gate oxide quality |
Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons |
2000-10-10 |
$11,210,000 |
| 6124183 |
Shallow trench isolation formation with simplified reverse planarization mask |
Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Larry Wang, Effiong Ibok |
2000-09-26 |
$6,800,000 |
| 6100145 |
Silicidation with silicon buffer layer and silicon spacers |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2000-08-08 |
$4,885,000 |
| 6096599 |
Formation of junctions by diffusion from a doped film into and through a silicide during silicidation |
Karsten Wieczorek, Larry Wang, Paul R. Besser |
2000-08-01 |
$5,860,000 |
| 6090712 |
Shallow trench isolation formation with no polish stop |
Christopher F. Lyons, Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Obok |
2000-07-18 |
$10,732,000 |
| 6090713 |
Shallow trench isolation formation with simplified reverse planarization mask |
Olov Karlsson, Christopher F. Lyons, Basab Bandyophadhyay, Larry Wang, Effiong Ibok |
2000-07-18 |
$10,732,000 |
| 6074927 |
Shallow trench isolation formation with trench wall spacer |
Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons |
2000-06-13 |
$9,833,000 |
| 6046104 |
Low pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless vias |
— |
2000-04-04 |
$6,962,000 |
