Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6599810 | Shallow trench isolation formation with ion implantation | Olov Karlsson, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2003-07-29 |
| 6514844 | Sidewall treatment for low dielectric constant (low K) materials by ion implantation | Jeremy I. Martin, Eric M. Apelgren, Christian Zistl, Paul R. Besser, Srikantewara Dakshina-Murthy +2 more | 2003-02-04 |
| 6380047 | Shallow trench isolation formation with two source/drain masks and simplified planarization mask | Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2002-04-30 |
| 6380040 | Prevention of dopant out-diffusion during silicidation and junction formation | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2002-04-30 |
| 6274511 | Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer | Karsten Wieczorek, Paul R. Besser | 2001-08-14 |
| 6255214 | Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions | Karsten Wieczorek, Paul R. Besser | 2001-07-03 |
| 6238986 | Formation of junctions by diffusion from a doped film at silicidation | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2001-05-29 |
| 6239031 | Stepper alignment mark structure for maintaining alignment integrity | Olov Karlsson, Larry Wang, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons | 2001-05-29 |
| 6204177 | Method of forming junction leakage free metal silicide in a semiconductor wafer by alloying refractory metal | Paul R. Besser, Karsten Wieczorek | 2001-03-20 |
| 6171962 | Shallow trench isolation formation without planarization mask | Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Larry Wang, Effiong Ibok | 2001-01-09 |
| 6169005 | Formation of junctions by diffusion from a doped amorphous silicon film during silicidation | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2001-01-02 |
| 6165903 | Method of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidation | Paul R. Besser, Karsten Wieczorek | 2000-12-26 |
| 6162699 | Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery | Larry Wang, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-12-19 |
| 6162689 | Multi-depth junction formation tailored to silicide formation | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2000-12-19 |
| 6156615 | Method for decreasing the contact resistance of silicide contacts by retrograde implantation of source/drain regions | — | 2000-12-05 |
| 6150243 | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2000-11-21 |
| 6143624 | Shallow trench isolation formation with spacer-assisted ion implantation | Olov Karlsson, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-11-07 |
| 6130467 | Shallow trench isolation with spacers for improved gate oxide quality | Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2000-10-10 |
| 6124183 | Shallow trench isolation formation with simplified reverse planarization mask | Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Larry Wang, Effiong Ibok | 2000-09-26 |
| 6100145 | Silicidation with silicon buffer layer and silicon spacers | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2000-08-08 |
| 6096599 | Formation of junctions by diffusion from a doped film into and through a silicide during silicidation | Karsten Wieczorek, Larry Wang, Paul R. Besser | 2000-08-01 |
| 6090712 | Shallow trench isolation formation with no polish stop | Christopher F. Lyons, Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Obok | 2000-07-18 |
| 6090713 | Shallow trench isolation formation with simplified reverse planarization mask | Olov Karlsson, Christopher F. Lyons, Basab Bandyophadhyay, Larry Wang, Effiong Ibok | 2000-07-18 |
| 6074927 | Shallow trench isolation formation with trench wall spacer | Basab Bandyopadhyay, Olov Karlsson, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2000-06-13 |
| 6046104 | Low pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless vias | — | 2000-04-04 |