Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Shallow trench isolation formation without planarization mask

Shallow trench isolation formation without planarization mask

US Patent 6171962 · Granted Jan 9, 2001

Estimated economic value: $4,016,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

One time programmable bitcell with select device in isolated well2024
Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) 2020
OTP cell with improved programmability2018
Three-transistor OTP memory cell2018
Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues2016
Gate structures for transistor devices for CMOS applications and products2016
Semiconductor device having a through-substrate via2015
Methods for fabricating integrated circuits including fluorine incorporation2015
Dynamic trim method for non volatile memory products2015
Methods of forming gate structures for transistor devices for CMOS applications2015
Method of forming an erbium silicide metal gate stack FinFET device via a physic2015
Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues2015