Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approach

Method of forming an erbium silicide metal gate stack FinFET device via a physical vapor deposition nanolaminate approach

US Patent 9059156 · Granted Jun 16, 2015

Estimated economic value: $539,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Using content type to select brightness in direct-lit backlight units2024
Low temperature deposition of low loss dielectric layers in superconducting circ2016
Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues2016
Methods of preventing plasma induced damage during substrate processing2016
Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile2016
Gate structures for transistor devices for CMOS applications and products2016
Gate structures for transistor devices for CMOS applications and products2016
Gate structures for transistor devices for CMOS applications and products2016
Photo-induced MSM stack2016
Combinatorial screening of metallic diffusion barriers2016
Combinatorial screening of metallic diffusion barriers2016
Tunneling barrier creation in MSM stack as a selector device for non-volatile me2016